Area-Efficient SIP Module Interconnects via Vertical TSVs
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Solution Overview
Problem
The increasing complexity and miniaturization of electronic devices pose challenges in efficiently connecting system-in-package (SIP) modules to other circuits within electronic devices, as existing interconnect structures often compromise the compact size benefits.
Innovation Solution
The use of flexible circuit boards with plated contacts and LDS frames, along with vertical interconnects, to create efficient pathways for signal and power connections between SIP modules and other circuitry, allowing for area-efficient integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If traditional interconnect structures are used to connect SIP modules to other circuits, then electrical connectivity is achieved, but the device size increases and the compact size benefit is lost
Solution Approach 1:
The patent transitions from planar interconnect structures to three-dimensional vertical interconnect structures. Through-silicon vias (TSVs) enable electrical connections to extend vertically through the substrate, allowing multiple connection layers and reducing the horizontal footprint of interconnect structures, thereby achieving compact integration without sacrificing connectivity.
Solution Approach 2:
The patent implements nested interconnect structures where conductive elements are embedded within substrate layers and enclosed by encapsulation materials. The TSVs are nested within the substrate, with additional conductive layers and shielding structures nested around them, creating a compact hierarchical arrangement that maximizes space utilization.
2Adaptability or versatility
If SIP modules are used to increase functionality, then device functionality increases, but connection difficulty to other circuits increases
Solution Approach 1:
The patent designs universal interconnect structures that can accommodate multiple connection types and configurations. The TSV architecture supports various conductive fill materials (copper, aluminum, conductive polymer) and can be integrated with different substrate types, enabling the same basic structure to serve multiple functionality requirements while simplifying the connection process.
Solution Approach 2:
The patent introduces intermediate conductive layers and encapsulation structures that facilitate connections between the SIP module components and external circuits. These intermediary elements provide mechanical support, electrical connectivity, and signal routing, making the connection process easier while enabling enhanced functionality within the sealed package.
3Volume of moving object
If interconnect structures are made small to maintain compact size, then device compactness is maintained, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs parameter changes in the TSV formation process, including controlling via diameter, depth, and wall roughness, as well as adjusting conductive fill material properties. By optimizing these parameters, the patent achieves precise alignment and connectivity in compact structures while maintaining manufacturability through standardized process parameters.
Solution Approach 2:
The patent uses composite material structures combining different materials with complementary properties: silicon substrate with embedded TSVs, conductive fill materials (copper, aluminum, or conductive polymer) for electrical connectivity, and encapsulation materials for mechanical support and protection. This composite approach enables precise interconnect structures that are manufacturable with current technology while maintaining compact dimensions.
Data Source
AI summary
Connectors that allow system-in-package modules to connect to other circuits in an electronic device in an area-efficient manner.