Dual-Sided SiP Packaging With TMVs for Fine-Pitch Interconnects
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and miniaturization of electronic components, particularly in forming interconnects with a smaller pitch without increased risk of bridging or process defects, while also requiring flexible design options and reduced warpage in package structures.
Innovation Solution
The implementation of a System-in-Package (SiP) device with an asymmetric dual-sided molded package on a multi-layered redistribution structure, utilizing through-molding vias (TMVs) and varying molding materials and thicknesses on each side to connect heterogeneous devices, allowing for a greater number of connections and improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If interconnects are formed with smaller pitch to increase connection density, then device functionality and integration density are improved, but the risk of bridging and process defects increases
Solution Approach 1:
The molding process is segmented into multiple stages with different materials (first molding material and second molding material) applied at different times. This segmentation allows for controlled formation of interconnect openings and prevents bridging by ensuring proper isolation between interconnect regions during the molding process.
Solution Approach 2:
Interconnect openings are formed and prepared before the second molding material is applied. This preliminary action ensures that interconnect structures are properly defined and isolated before final encapsulation, preventing bridging defects while enabling smaller pitch interconnect formation.
2Stability of the object's composition
If molding material thickness is increased to reduce warpage, then package structural stability is improved, but package size and complexity increase
Solution Approach 1:
Different molding materials with different thicknesses are applied to different regions of the package. The first molding material provides baseline encapsulation while the second molding material is applied selectively to regions requiring additional warpage control, achieving stability without uniform thickness increase.
Solution Approach 2:
The package structure employs asymmetric molding material distribution with varying thicknesses on different sides of the semiconductor device. This asymmetric design allows targeted warpage compensation while maintaining overall package compactness and reducing unnecessary material usage.
3Stability of the object's composition
If asymmetric dual-sided molding with varying material thicknesses is used to reduce warpage, then package stability is improved, but manufacturing complexity increases
Solution Approach 1:
The molding process is divided into sequential stages with distinct materials and thicknesses applied in a controlled manner. This segmentation transforms a complex single-step process into manageable stages, reducing manufacturing complexity while achieving warpage control.
Data Source
AI summary
A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.