SiP Power Path Layout Through Component Backside Surfaces

The patent transitions from traditional planar power routing through the substrate to a three-dimensional vertical power path that passes through the backside surfaces of components. This dimensional change allows power to be delivered directly to components without traversing long horizontal substrate paths, thereby reducing voltage drop while maintaining effective power delivery.

The patent introduces an intermediary power path structure that connects power sources directly to components through backside surfaces. This intermediary path bypasses the traditional substrate routing mechanism, reducing the harmful voltage drop effect while maintaining the necessary power delivery function.

The patent divides the device into distinct regions with different circuit densities and implements separate power routing paths for each region. High-density regions receive power through optimized vertical paths, while lower-density regions use traditional routing. This segmentation allows high circuit density without proportionally increasing overall power routing complexity.

The patent applies different power routing strategies to different regions based on their specific density requirements. High-density regions receive specialized vertical power paths with lower complexity, while other regions use standard routing. This local quality approach ensures that power routing complexity is optimized for each specific region rather than uniformly applied.