Si-rich Dielectric X-ray Detector Fabrication
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Solution Overview
Problem
The traditional digital X-ray flat indirect detector systems require complex and costly fabrication processes due to the use of PIN photodiodes, which necessitate multiple thin-film deposition and photolithography-etching steps to prevent short defects.
Innovation Solution
The use of a silicon-rich (Si-rich) dielectric layer as a photo-sensing material in X-ray detectors, eliminating the need for additional dielectric or isolation layers and reducing the number of fabrication steps, with a Si-rich dielectric layer thickness less than 0.5 μm.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If PIN photodiodes are used as photo-sensing devices, then X-ray detection capability is achieved, but fabrication process complexity increases due to required isolation layers
Solution Approach 1:
The patent extracts and eliminates the isolation layer requirement by using a different photo-sensing material (amorphous silicon-based photo-sensing device) that does not require surrounding isolation layers like PIN photodiodes do. This removes the complex isolation layer fabrication steps while maintaining X-ray detection capability through the scintillator layer and photo-sensing device combination.
Solution Approach 2:
The patent changes the material parameter from traditional PIN photodiode to amorphous silicon-based photo-sensing device, which fundamentally alters the fabrication requirements. This material substitution eliminates the need for complex isolation structures and reduces the number of deposition and etching steps from 12-13 to a simpler process.
2Reliability
If PIN photodiodes are used as photo-sensing devices, then X-ray detection is enabled, but manufacturing cost increases due to multiple fabrication steps
Solution Approach 1:
The patent removes the costly isolation layer fabrication steps by using amorphous silicon-based photo-sensing devices that do not require surrounding isolation structures. This extraction of unnecessary process steps directly reduces manufacturing costs while preserving the essential X-ray detection function through the scintillator and photo-sensing device integration.
Solution Approach 2:
By changing the photo-sensing material parameter from PIN photodiode to amorphous silicon-based device, the patent fundamentally reduces the number of fabrication steps required, thereby lowering material consumption, equipment usage, and overall manufacturing costs while maintaining detection reliability.
3Reliability
If PIN photodiodes are used as photo-sensing devices, then detection function is achieved, but device thickness increases
Solution Approach 1:
The patent changes the physical dimension parameter by using amorphous silicon-based photo-sensing devices with thickness of several hundred nanometers, significantly thinner than the 1-2 micrometer PIN photodiodes. This parameter change maintains detection functionality through the scintillator layer's X-ray to light conversion while reducing overall device thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, reduces material costs, and lowers the overall thickness of the X-ray detector, while maintaining effective X-ray detection capabilities.
Implementation Method 1
a scintillator layer that corresponds to the patterned Si-rich dielectric layer
Implementation Method 2
a patterned Si-rich dielectric layer which is disposed on the bottom sensing electrode... The patterned Si-rich dielectric layer serves as a photo-sensing material
Data Source
AI summary
A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.