Skipping Word Line Programming for Non-Volatile Memory Error Reduction
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Solution Overview
Problem
In rewritable non-volatile memory modules, improper programming of word lines can lead to a high number of error bits in stored data due to cell-to-cell interference, which existing methods fail to adequately address.
Innovation Solution
A programming method that involves sending a skipping write command sequence to execute a skipping programming process, where a first word line is programmed, and then a third word line not adjacent to the first word line is programmed, while skipping the adjacent second word line, thereby reducing errors by avoiding interference between adjacent word lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If adjacent word lines are programmed sequentially, then programming efficiency is improved, but cell-to-cell interference increases causing more error bits
Solution Approach 1:
The patent applies the skipping principle by intentionally skipping adjacent word lines during the programming process. After programming a first word line, the method skips the adjacent second word line and programs a third word line instead. This skipping mechanism reduces cell-to-cell interference and error bits while maintaining acceptable programming efficiency through optimized word line selection.
2Quantity of substance
If all word lines are programmed densely, then storage capacity is maximized, but programming errors increase due to interference
Solution Approach 1:
The patent applies local quality by selectively programming specific word lines based on their position and interference characteristics. Instead of uniformly programming all word lines, the method identifies and programs word lines that are less prone to interference, such as those at the ends of the word line array or separated by at least one skipped word line. This localized approach optimizes programming reliability while maintaining storage capacity.
Data Source
AI summary
A programming method, a memory storage device and a memory controlling circuit unit are provided. The method includes: receiving a first write command; and selecting a first physical erasing unit and sending a first skipping write command sequence according to the first write command. The first skipping write command sequence instructs to execute a first skipping programming process. The first skipping programming process includes: programming first data into a first word line of the first physical erasing unit; and after the first word line is programmed, skipping a second word line adjacent to the first word line, and programming the first data into a third word line not adjacent to the first word line.