SLED-SOA ASE Source Layout for High-Power Broadband Output

Solution Overview

Problem

ASE semiconductor sources, specifically superluminescent light emitting diodes (SLEDs), are limited in their maximum power output due to the need for a higher confinement factor, which results in catastrophic optical damage and nonlinear effects, preventing stable operation for high-power applications like full-field OCT and display systems.

Innovation Solution

A semiconductor optical amplifier (SOA) is arranged in series with a SLED, optimizing the confinement factor difference between the two to achieve higher power outputs by amplifying the broadband ASE light, with the SOA having a lower confinement factor than the SLED to circumvent power limits and nonlinear effects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If the confinement factor of SLED is increased to achieve higher output power, then the output power increases, but catastrophic optical damage and nonlinear effects occur

Engineering Contradiction:

Improveoutput powerVSAvoidstable operation

Core Design Contradiction:

PowerVSReliability

Solution Approach 1:

The device is divided into two separate semiconductor components: a SLED section for generating broadband ASE light and an SOA section for amplifying the light. This segmentation allows each component to operate within its optimal confinement factor range, preventing catastrophic optical damage while achieving high output power.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The SLED acts as an intermediary between the pump source and the SOA amplifier. It converts electrical energy to broadband optical energy, which then serves as the input for the SOA, enabling the system to achieve high power without directly subjecting the amplifier to high current densities.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Power

If the confinement factor of SLED is increased to achieve higher output power, then the output power increases, but nonlinear effects prevent stable operation

Engineering Contradiction:

Improveoutput powerVSAvoidstable operation

Core Design Contradiction:

PowerVSStability of the object's composition

Solution Approach 1:

The device is divided into two separate semiconductor components: a SLED section for generating broadband ASE light and an SOA section for amplifying the light. This segmentation allows each component to operate within its optimal confinement factor range, preventing catastrophic optical damage while achieving high output power.

Inventive Principle:

Principle #1Segmentation

3Power

If a single SLED is used to achieve high output power, then the power increases, but the spectral broadness is reduced

Engineering Contradiction:

Improveoutput powerVSAvoidspectral broadness

Core Design Contradiction:

PowerVSQuantity of substance

Solution Approach 1:

The SLED acts as an intermediary between the pump source and the SOA amplifier. It converts electrical energy to broadband optical energy, which then serves as the input for the SOA, enabling the system to achieve high power without directly subjecting the amplifier to high current densities.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The combination of SLED and SOA achieves higher power outputs while maintaining spectral broadness, overcoming the limitations of SLEDs in achieving stable, high-power operation for applications requiring broad optical spectra.

Implementation Method 1

amplified spontaneous emission semiconductor source

Methodology Applied

Scientific EffectAmplified spontaneous emission:

Implementation Method 2

carriers for amplified spontaneous emission are located

Methodology Applied

Scientific EffectSpontaneous emission:

Implementation Method 3

semiconductor optical amplifier (SOA), arranged in series

Methodology Applied

Scientific EffectOptical amplification:

Data Source

PatentUS11791437B2Amplified spontaneous emission semiconductor source

Publication Date: 2023.10.17 INDIE TECHNOLOGIES SWITZERLAND AG

AI summary

An amplified spontaneous emission, ASE, source device combining a superluminescent light emitting diode, SLED, with a semiconductor optical amplifier, SOA, the SLED and SOA being arranged in series so that the SLED acts as a seed and the SOA acts as a broadband amplifier for the SLED output. Both SLED and SOA have a structure made up of a succession of epitaxial semiconductor layers which form a waveguide comprising a core of active region layers and surrounding cladding layers. The SLED and SOA confinement factors of the SLED and SOA, wherein confinement factor is the percentage of the optical mode power in the active region layers, is designed so that the SLED confinement factor is greater than that of the SOA by at least 20%. This allow higher power outputs, because the SLED power limits imposed by the onset of non-linear effects and catastrophic optical damage can be circumvented.