(110) Silicon Wafer Slicing Angle Optimization
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Solution Overview
Problem
The existing methods for slicing silicon single crystal ingots using a wire saw to manufacture (110) silicon wafers face challenges in achieving a stable surface oxide film and have a lower yield ratio due to frequent breaking during the slicing process.
Innovation Solution
Slicing the silicon single crystal ingot at an angle greater than 30° between the wire traveling direction and the [−112] or [1-12] direction, or their crystallographically equivalent directions, to reduce the likelihood of breaking and improve yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional wire saw slicing is used for (110) silicon ingot, then manufacturing process is simple, but breaking occurs frequently during slicing
Solution Approach 1:
The invention changes the critical parameter of wire traveling direction angle relative to the crystal orientation. By controlling the angle to be 30° to 60° with respect to the <112> direction, the slicing process avoids breaking while maintaining simplicity. This parameter optimization resolves the contradiction between ease of manufacture and wafer integrity.
2Reliability
If (110) silicon wafer is manufactured by conventional slicing, then production yield is low due to breaking, but the wafer has superior electrical characteristics
Solution Approach 1:
The invention optimizes the wire traveling direction angle parameter to 30° to 60° relative to the <112> direction. This parameter change reduces breaking during slicing, thereby increasing production yield while preserving the superior electrical characteristics of (110) silicon wafers.
3Ease of operation
If wire traveling direction is aligned with crystallographic directions, then slicing is straightforward, but breaking occurs along specific crystal planes
Solution Approach 1:
The invention introduces asymmetry in the wire traveling direction relative to the crystal structure. By setting the angle to 30° to 60° rather than aligning with crystallographic directions, the process avoids symmetric breaking patterns along crystal planes while maintaining operational simplicity.
Solution Approach 2:
The invention changes the directional parameter of wire travel to create an asymmetric cutting path that avoids harmful breaking planes. This parameter optimization balances ease of operation with reduction of crystallographic breaking.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses breaking during slicing and enhances the production yield ratio of (110) silicon wafers, making them more viable for manufacturing.
Implementation Method 1
a wire saw (10) which allows a wire (1) to travel at a high speed and presses an ingot (3) to be sliced
Implementation Method 2
presses an ingot (3) to be sliced (cut) while applying a slurry having GC (silicon carbide) abrasive grains dispersed in a liquid
Data Source
AI summary
The present invention provides a method for slicing a silicon single crystal ingot having a plane direction (110) by a wire saw to manufacture a (110) silicon wafer, wherein slicing is performed in such a manner that each angle formed between a traveling direction of a wire in the wire saw and a [−112 ] direction and a [1-12] direction in the (110) silicon single crystal ingot or a direction crystallographically equivalent to the directions exceeds 30°. As a result, the method for manufacturing the (110) silicon wafer that can suppress occurrence of breaking at the time of slicing and improve a production yield ratio can be provided.