Slit Electrode Design for LCD Subpixel Edge Dark Region Reduction

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Solution Overview

Problem

Liquid crystal displays (LCDs) with fringe field switching (FFS) and high aperture ratio advanced super dimensional switching (HADS) modes suffer from a large dark region at the edges of subpixels, affecting transmittance and light efficiency.

Innovation Solution

An array substrate with a slit electrode design where one end of each slit is opened, reducing edge shielding and improving transmittance by modifying the masking process during manufacturing to extend the mask to the edges of the subpixel.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a slit electrode is adopted in FFS mode LCD, then the electrode structure can be formed, but a dark region will be produced at edges of the subpixel, affecting transmittance

Engineering Contradiction:

Improveelectrode structure formationVSAvoidtransmittance

Core Design Contradiction:

Ease of manufactureVSIllumination intensity

Solution Approach 1:

Instead of having closed slits that block light at the edges, the patent inverts the design by opening one end of each slit to the edge of the subpixel. This allows light to pass through the previously blocked edge regions, converting the harmful light-blocking effect into a light-transmitting structure while maintaining the electrode's electrical function.

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The patent extracts the light-blocking portion from the slit electrode structure by opening the slits at the edges. By removing the closed end configuration at the subpixel edges, the harmful dark regions are eliminated while the electrode continues to provide its necessary electrical connectivity function.

Inventive Principle:

Principle #2Taking out (Extraction)

2Object-affected harmful factors

If slit electrode turnings are adjusted from long-sides to short-sides of the subpixel in HADS mode, then light leakage is improved, but the improved effect is limited and dark regions remain

Engineering Contradiction:

Improvelight leakageVSAvoiddark region area

Core Design Contradiction:

Object-affected harmful factorsVSIllumination intensity

Solution Approach 1:

The patent applies the inversion principle by changing from closed or turned slits to open slits at the edges. This fundamental structural inversion allows light to reach the edge regions that were previously blocked, significantly reducing dark region area beyond what turning adjustments alone could achieve.

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The patent applies local quality by making the slit configuration position-dependent: slits are opened at specific locations (edges of subpixels) where light leakage occurs, while maintaining appropriate electrode structure in other regions. This localized modification targets the specific problem areas without compromising overall electrode functionality.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS10401685B2Array substrate, manufacturing method thereof and display device

Publication Date: 2019.09.03 BOE TECHNOLOGY GROUP CO LTD

AI summary

An array substrate, a manufacturing method thereof and a display device are provided. The array substrate including a slit electrode, wherein the slit electrode includes a plurality of slits; and one end of each of the slits is opened. Problem of overlarge area of dark region at edges of a subpixel is solved, thereby improving the transmittance and the light efficiency of liquid crystals.