Slit Nozzle Vapor Deposition Source for Uniform Film
Solution Overview
Problem
Conventional vapor deposition sources, such as line sources, suffer from poor material use efficiency due to the circular shape of nozzles leading to widespread particle dispersion, resulting in significant material loss and non-uniform film deposition on large substrates, especially in the Y direction where the source is shorter.
Innovation Solution
The vapor deposition source features slit-shaped nozzles with longer sides parallel to the X direction and shorter sides parallel to the Y direction, arranged at regular intervals, allowing for controlled particle scattering, enhancing material use efficiency and achieving uniform film thickness distribution by optimizing the slit shape and arrangement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If circular nozzles are used in the vapor deposition source, then the vapor deposition particles are ejected outward, but the particles widely spread in the X direction causing poor material use efficiency
Solution Approach 1:
The patent changes the geometric parameters of the nozzles from circular to slit-shaped with specific aspect ratios (4:1 to 50:1). This parameter change fundamentally alters the particle ejection pattern from radial dispersion to directional scattering, improving material use efficiency by confining particles to the vapor-deposition area while maintaining adequate film uniformity through the controlled scattering characteristics of the slit geometry.
Solution Approach 2:
The patent introduces asymmetry in the nozzle geometry by using slit-shaped openings with significantly different dimensions in orthogonal directions (length much greater than width). This asymmetric shape creates anisotropic particle scattering where particles spread widely in the X direction (parallel to slit length) but are confined in the Y direction (parallel to slit width), directly addressing the material efficiency problem while maintaining film uniformity.
2Object-affected harmful factors
If deposition preventer plates are provided to obstruct vapor deposition particles, then particle scattering is prevented, but material use efficiency remains poor due to particle loss on the plates
Solution Approach 1:
The patent converts the harmful effect of particle scattering into a beneficial directional scattering pattern. Instead of using deposition preventer plates to block scattered particles (which causes material loss), the slit-shaped nozzles inherently produce directional scattering that confines particles to the vapor-deposition area. The scattering that would have been harmful is now controlled and beneficial, eliminating the need for preventer plates and their associated material losses.
Solution Approach 2:
The patent extracts and removes the deposition preventer plates from the system. By changing the nozzle geometry to produce directional scattering, the harmful particle dispersion is eliminated at the source, making the preventer plates unnecessary. This extraction eliminates the material loss that occurred when particles adhered to the preventer plates.
3Area of stationary object
If the line source is longer in the X direction than the Y direction, then uniform vapor deposition can be achieved over large area, but the use efficiency of vapor deposition material is poor
Solution Approach 1:
The patent applies local quality changes by making each nozzle's scattering characteristics match the local requirements of the substrate area it serves. The slit-shaped nozzles produce directional scattering tailored to the specific geometry of the vapor-deposition area, confining particles locally to where they are needed on the substrate. This localized control of particle distribution improves material efficiency while maintaining uniform coverage across the entire large-area substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves the use efficiency of vapor deposition materials and ensures uniform film thickness distribution across the substrate, reducing material loss and enabling high productivity while maintaining device size efficiency.
Implementation Method 1
a vapor deposition source that has holes (hereinafter referred to as nozzles) via which a vapor deposition material is ejected in the form of vapor deposition particles
Implementation Method 2
The line source 100 is configured to be heated and thereby cause a vapor deposition material to be ejected in the form of vapor deposition particles
Data Source
AI summary
Provided is a line source that can achieve uniform film thickness distribution and also achieve high use efficiency of vapor deposition materials. A line source (10) has slit nozzles (1) having a slit nozzle's length-to-width ratio of 4 to 50, a width of 1 mm to 5 mm, and a depth of 5 mm to 20 mm.