Slit Semiconductor Device with Dual Gates
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in integrated circuit fabrication due to complex and expensive lithographic processes, low active device utilization in integrated circuits, and inefficiencies in conventional flash memory devices, particularly related to voltage drops and charging/discharging difficulties.
Innovation Solution
The development of semiconductor devices with a slit portion and multiple terminals, where the slit portion has a width less than the ends, and the use of different materials for the semiconductor portions, allowing for improved transistor density and pattern design, including the use of dual gates and a bulk semiconductor region with a controlled depletion region for enhanced current flow and reduced voltage requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional lithography processes are used with masks and photoresist, then pattern formation is achieved, but the process becomes complex and expensive
Solution Approach 1:
The patent extracts and eliminates the mask and photoresist components from the lithographic process. The direct-write e-beam lithography system forms patterns without requiring these conventional lithographic materials, thereby simplifying the manufacturing process while maintaining pattern formation capability.
Solution Approach 2:
The patent replaces the optical-based conventional lithography system (using light, masks, and photoresist) with an electron beam-based direct-write system. This substitution enables precise pattern formation through direct electron beam writing, eliminating the need for complex optical lithographic equipment and materials.
2Manufacturing precision
If shorter wavelengths are used in lithography, then resolution is improved, but implementation cost increases and physical limitations arise
Solution Approach 1:
The patent replaces optical lithography (which relies on wavelength reduction for resolution) with electron beam lithography. The electron beam system achieves high resolution through beam focusing and direct writing capabilities, bypassing the need for expensive short-wavelength light sources and associated optical components.
3Adaptability or versatility
If controlling gate and charge storage gate are stacked in series, then flash memory structure is formed, but significant voltage drop occurs between controlling gate and bulk semiconductor region
Solution Approach 1:
The patent transitions from a vertical stacking arrangement (controlling gate stacked above charge storage gate) to a lateral or alternative spatial configuration. This dimensional change in gate arrangement reduces the voltage drop path and improves electrical performance while maintaining flash memory functionality.
Solution Approach 2:
The patent introduces an intermediary structure or material between the controlling gate and charge storage gate that facilitates better electrical coupling and reduces voltage drop. This intermediary element improves the electrical connection without compromising the memory storage function.
4Adaptability or versatility
If conventional flash memory structure with ONO layer is used, then charge storage is achieved, but fabrication difficulty increases due to being between two polysilicon layers
Solution Approach 1:
The patent extracts or eliminates the problematic ONO layer structure from the flash memory device. By removing this difficult-to-fabricate intermediate layer, the patent simplifies the manufacturing process while alternative structures or methods are employed to achieve the necessary charge storage functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables compact, high-performance semiconductor devices with improved transistor density, reduced voltage drops, and efficient charging/discharging characteristics, leading to cost savings and increased resource utilization in integrated circuit design.
Implementation Method 1
a bulk semiconductor region with a controlled depletion region for enhanced current flow and reduced voltage requirements
Data Source
AI summary
A semiconductor device, comprising a first semiconductor portion having a first end, a second end, and a slit portion, wherein the width of the slit portion is less than the width of at least one of the first end and the second end; a second portion that is a different material than the first semiconductor portion, a third portion that is a different material than the first semiconductor portion, wherein the second and third portions are on opposite sides of the slit portion, and at least three terminals selected from a group consisting of a first terminal connected to the first end, a second terminal connected to the second end, a third terminal connected to the second portion, and a fourth terminal connected to the third portion.