CMP Slurry Adhesion Inhibitor for Scratch Prevention
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Solution Overview
Problem
Chemical mechanical polishing (CMP) processes using silica-based slurries often result in byproducts adhering to polishing pads, causing scratches on semiconductor wafers and substrates, while ceria-based slurries, though effective, can contaminate polishing pads and diamond disks.
Innovation Solution
A slurry comprising a dispersion agent, a polish accelerating agent, and an adhesion inhibitor, specifically a benzene compound with a carboxyl group, is used to prevent abrasive adhesion on polishing pads and diamond disks, enhancing the CMP process by reducing contamination and improving polishing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If silica-based slurry is used for CMP process, then step difference removal capability is improved, but byproducts adhere to polishing pad causing scratches on wafer surface
Solution Approach 1:
The patent introduces an adhesion inhibitor as an intermediary substance that prevents byproducts from adhering to the polishing pad. This mediator disrupts the bonding between byproducts and the pad surface, eliminating the harmful effect of scratch defects while preserving the step difference removal capability of the silica-based slurry
2Manufacturing precision
If ceria-based slurry is used for polishing, then flat silicon oxide layer polishing is improved, but polishing pad and diamond disk are contaminated
Solution Approach 1:
The adhesion inhibitor acts as a protective intermediary layer between the ceria-based slurry and the polishing tools. It prevents ceria particles from adhering to and contaminating the polishing pad and diamond disk, thereby maintaining manufacturing precision while reducing tool contamination and extending tool lifespan
3Device complexity
If conventional slurry is used without adhesion inhibitor, then CMP process simplicity is maintained, but byproduct adhesion and contamination problems occur
Solution Approach 1:
The patent modifies the chemical composition parameters of the slurry by incorporating an adhesion inhibitor. This parameter change fundamentally alters the adhesion characteristics of the system, preventing byproduct accumulation and tool contamination, thereby significantly improving process reliability with only a minor increase in formulation complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The slurry effectively reduces contamination of polishing pads and diamond disks, increases the step-difference removing rate of silicon oxide layers, and minimizes scratch defects, thereby improving the CMP process efficiency and extending the lifespan of polishing tools.
Implementation Method 1
an adhesion inhibitor, and an abrasive. The adhesion inhibitor includes a benzene compound combined with a carboxyl group
Implementation Method 2
a dispersion agent
Implementation Method 3
The CMP process may include a mechanical etching process and a chemical etching process
Implementation Method 4
The CMP process may include a mechanical etching process and a chemical etching process
Data Source
AI summary
A polishing slurry includes an abrasive, a dispersion agent, a polish accelerating agent and an adhesion inhibitor. The adhesion inhibitor includes a benzene compound combined with a carboxyl group. Methods of planarizing an insulating layer using the slurry are also provided.