Slurry Compound for SOH Organic Layer Polishing
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Solution Overview
Problem
Current semiconductor device fabrication processes face challenges in achieving high integration density and performance due to difficulties in reducing process margins, such as in photolithography, which affect the electrical isolation of metal lines.
Innovation Solution
A slurry compound comprising colloidal ceria particles, an oxidizing agent like ferric nitrate, and a polishing accelerator like imidazole is used to effectively polish spin-on-hardmask organic layers, creating air gaps between metal lines, thereby enhancing integration density and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing slurries are used to polish spin-on-hardmask organic layers, then the polishing process is simple, but the polishing rate is insufficient and metal lines cannot be effectively isolated
Solution Approach 1:
The slurry compound uses a composite formulation combining colloidal ceria particles (30-80 nm) as polishing particles with specific oxidizing agents (0.2-0.7 wt% such as hydrogen peroxide, ammonium perchlorate, sodium chlorate, sodium chlorite, or ferric nitrate) and polishing accelerators (such as imidazole, pyridine, tetrazoles, histamine, 1,3-dimethylxanthine, 6-mercaptopurine, 1H-1,2,3-triazole, 1H-1,2,4-triazole, poly-[2,2′-(m-phenylen)-5,5′-bisbenzimidazole], 1H-Pyrrole, 1,3-oxazole, 1,3-thiazole, Pyrazole, 1-Methylimidazole, and 4-Methyl-1H-imidazole). This composite material achieves high polishing rates on spin-on-hardmask organic layers while maintaining selectivity to protect metal lines from corrosion and enable effective electrical isolation through air gap formation.
2Reliability
If polishing is performed to expose metal lines, then electrical isolation is achieved, but metal corrosion occurs without proper protection
Solution Approach 1:
The polishing accelerator acts as an intermediary substance that adsorbs onto the metal line surfaces during the polishing process, forming a protective layer that prevents direct contact between the oxidizing agents and the metal. This intermediary mechanism enables the slurry to effectively polish the spin-on-hardmask organic layer and expose metal lines for electrical isolation while simultaneously protecting the metal from corrosion by the oxidizing components of the slurry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The slurry compound improves the polishing rate and selectivity of semiconductor devices, allowing for efficient electrical isolation of metal lines and reducing corrosion, leading to higher integration density and performance.
Implementation Method 1
a slurry compound for polishing a spin-on-hardmask (SOH) organic layer may include a polishing particle
Implementation Method 2
an oxidizing agent containing at least one selected from the group consisting of nitrate, sulfate, chlorate, perchlorate, chlorine, and peroxide
Implementation Method 3
the polishing accelerator may be adsorbed on a surface of a metal to protect the metal against corrosion
Data Source
AI summary
Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.