Small-Cell XBAR Layout for Wideband RF Filtering

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Solution Overview

Problem

Current RF filters, particularly those using acoustic wave resonators, are not well-suited for higher frequencies and wider bandwidths required in future communication networks, such as 5G NR standards, which demand improved performance in terms of insertion loss, rejection, and power handling.

Innovation Solution

The development of Transversely-Excited Film Bulk Acoustic Resonators (XBARs) with optimized IDT finger configurations and partitioned cell structures to reduce spurious modes and enhance Q-factor, allowing for effective operation in higher frequency bands.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional acoustic wave resonators are used, then existing RF filter performance is maintained, but they are not suitable for higher frequencies and wider bandwidths required in future communication networks

Engineering Contradiction:
Improvefrequency range adaptabilityVSAvoidfilter performance reliability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent changes the fundamental operating parameters of the resonator by transitioning from surface acoustic wave (SAW) to bulk acoustic wave (BAW) modes, enabling operation at higher frequencies (3.3-4.2 GHz and 4.4-5.0 GHz) while maintaining filter performance reliability through optimized piezoelectric film thickness and IDT finger dimensions

Inventive Principle:
Principle #35Parameter changes

2Loss of energy

If the number of IDT fingers is increased to improve frequency selectivity, then insertion loss improves, but spurious modes increase

Engineering Contradiction:
Improveinsertion lossVSAvoidspurious modes
Core Design Contradiction:
Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The patent segments the IDT structure into multiple identical finger pairs with optimized dimensions, where each finger pair contributes to the acoustic wave generation while the segmented structure inherently suppresses spurious modes through destructive interference, achieving low insertion loss without spurious mode contamination

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent converts the potential harmful effect of multiple IDT fingers generating spurious modes into a beneficial effect by carefully designing the finger dimensions and spacing so that spurious modes from different fingers interfere destructively, while the fundamental mode constructively interferes, thus achieving high frequency selectivity with clean spectral response

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Manufacturing precision

If larger resonator cells are used to reduce manufacturing complexity, then manufacturing precision requirements are reduced, but spurious modes increase and Q-factor decreases

Engineering Contradiction:
Improvecell dimension precisionVSAvoidQ-factor
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent uses small, standardized cell units with optimized dimensions that can be repeatedly manufactured with consistent precision, where each cell acts as an independent resonating element with high Q-factor, and multiple cells are combined to achieve the desired overall filter response without spurious mode contamination

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

XBARs provide improved frequency selectivity and reduced spurious modes, enabling efficient filtering in higher frequency bands, thus addressing the limitations of existing RF filters and enhancing communication system performance.

Implementation Method 1

An interdigital transducer (IDT) is disposed on the piezoelectric material layer and is configured to excite a shear acoustic wave in the piezoelectric material layer

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Data Source

PatentUS11264969B1Transversely-excited film bulk acoustic resonator comprising small cells
Publication Date: 2022.03.01 MURATA MFG CO LTD
  • US11264969B1 patent drawing
  • US11264969B1 patent drawing
  • US11264969B1 patent drawing

AI summary

Acoustic resonator devices are disclosed. An acoustic resonator device includes a plurality of cells electrically connected in parallel. Each cell includes an interdigital transducer (IDT) on a piezoelectric plate, the IDT having at least 15 and not more than 35 interleaved fingers.