SMOI Circuit Structures for Substrate Area Optimization
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Solution Overview
Problem
The miniaturization of electronic devices poses a challenge in efficiently utilizing substrate surface area, as side-by-side positioning of semiconductor microchips requires a large area, leading to the 'floating body effect' and inefficient use of horizontal space.
Innovation Solution
The implementation of a semiconductor-metal-on-insulator (SMOI) structure with vertical and horizontal circuit devices, where the peripheral region includes horizontal transistors with floating bodies and conductive material under the semiconductor material to control the floating body effect, and vertical transistors in the array region with conductive straps electrically coupled to vertical circuit devices, optimizing substrate usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If side-by-side positioning of semiconductor devices is used, then device layout is simple, but substrate area consumption increases
Solution Approach 1:
The patent transitions from planar side-by-side device positioning to vertical stacking architecture, where multiple semiconductor devices are positioned at different vertical levels above the substrate. This dimensional change allows significantly higher device density on the same substrate area while maintaining manufacturability through established vertical processing techniques.
2Area of stationary object
If vertical device positioning is used, then substrate area is reduced, but floating body effect increases
Solution Approach 1:
The patent extracts the problematic floating body effect by introducing conductive material between the vertically positioned semiconductor devices and the substrate. This conductive material acts as an electrical connection that removes the floating body charge accumulation, eliminating the harmful floating body effect while preserving the area-saving vertical architecture.
Solution Approach 2:
The conductive material serves as an intermediary element between the vertically stacked semiconductor devices and the substrate. It provides electrical connectivity that prevents charge buildup in the body region, thereby mediating between the space-saving vertical configuration and the elimination of floating body effects.
3Productivity
If more circuitry is integrated in smaller space, then device density increases, but device complexity increases
Solution Approach 1:
The patent segments the high-density circuitry into multiple vertical layers, with each layer containing simplified device structures. This segmentation allows complex functionality to be achieved through vertical stacking of simpler components, reducing the complexity burden on any single device while maintaining high overall density.
Data Source
AI summary
A circuit structure includes a substrate having an array region and a peripheral region. The substrate in the array and peripheral regions includes insulator material over first semiconductor material, conductive material over the insulator material, and second semiconductor material over the conductive material. The array region includes vertical circuit devices which include the second semiconductor material. The peripheral region includes horizontal circuit devices which include the second semiconductor material. The horizontal circuit devices in the peripheral region individually have a floating body which includes the second semiconductor material. The conductive material in the peripheral region is under and electrically coupled to the second semiconductor material of the floating bodies. Conductive straps in the array region are under the vertical circuit devices. The conductive straps include the conductive material and individually are electrically coupled to a plurality of the vertical circuit devices in the array region. Other implementations are disclosed.