Sn-Graded Ta2O5 Dielectric Structure for Higher Capacitor Capacitance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for producing Sn-doped Ta2O5 fail to allow for non-uniform distribution of tin, making it difficult to adjust the tin content in specific parts of the dielectric to enhance capacitor capacitance.
Innovation Solution
A multilayer dielectric structure is devised with a first part containing higher tin content at the surface and a second part with lower tin content, achieved through anodic oxidation or sputtering, enhancing polarization and reducing oxygen defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If uniform Sn-doping is used in Ta2O5 dielectric, then the dielectric can be easily manufactured using conventional methods, but the capacitance enhancement is limited due to inability to optimize tin distribution
Solution Approach 1:
The patent applies local quality by creating a non-uniform tin distribution in the dielectric layer, with higher tin concentration at the surface region and lower concentration in the bulk. This is achieved through a two-stage anodic oxidation process where tin is selectively incorporated at different stages, allowing the surface region to exhibit enhanced polarization and capacitance while maintaining manufacturing feasibility through controlled electrochemical processes.
Solution Approach 2:
The dielectric structure is segmented into distinct regions with different tin concentrations - a surface region with high tin content and a bulk region with low tin content. This segmentation allows each region to perform different functions: the surface region provides enhanced capacitance through strong polarization, while the bulk region maintains structural stability and reduces manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric structure significantly increases capacitor capacitance and durability by optimizing tin distribution, leveraging tin's polarization effect and minimizing defects.
Implementation Method 1
leveraging tin's polarization effect
Implementation Method 2
achieved through anodic oxidation or sputtering
Implementation Method 3
achieved through anodic oxidation or sputtering
Data Source
AI summary
A multilayer body includes metallic tantalum, and a dielectric including a first part and a second part. The second part is positioned between the metallic tantalum and the first part. The first part contains tantalum oxide and tin and is positioned at a surface of the dielectric. The second part contains tantalum oxide and is covered with the first part. The content of tin in the first part is higher than the content of tin in the second part.


