Semiconductor Optical Amplifier Slow Light Output Power
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Solution Overview
Problem
Semiconductor optical amplifiers using distributed Bragg reflector waveguides face a reduction in output power due to the generation of vertical oscillation mode light, which competes with and decreases the power of slow light mode light.
Innovation Solution
The semiconductor optical amplifier is designed with a conductive region and a nonconductive region within the optical amplification unit, using a surface-emitting type configuration with a GaAs-based DBR waveguide, where the reflectance of the upper DBR is decreased, the wavelength spectrum is shifted to the short wavelength side, and the driving current is controlled to suppress vertical oscillation mode light, thereby increasing the output power of slow light mode light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a distributed Bragg reflector waveguide is used in a semiconductor optical amplifier, then light amplification is achieved, but vertical oscillation mode light is generated which reduces output power
Solution Approach 1:
The patent applies local quality by creating a nonconductive region around the conductive region in the optical amplification unit. This local modification changes the refractive index distribution specifically in the vertical oscillation mode path, increasing confinement and suppressing vertical oscillation mode light generation while maintaining slow light mode amplification
Solution Approach 2:
The patent changes physical parameters by adjusting the reflectance of the upper DBR to be lower and shifting the wavelength spectrum to the short wavelength side. These parameter changes suppress vertical oscillation mode light and enhance slow light mode output power, resolving the contradiction between achieving amplification and avoiding harmful vertical oscillation modes
2Object-generated harmful factors
If the upper DBR reflectance is decreased, then vertical oscillation mode light is suppressed, but light confinement may be affected
Solution Approach 1:
The patent introduces a nonconductive region as an intermediary element around the conductive region. This intermediary structure provides additional light confinement through refractive index contrast, compensating for the reduced confinement from lower DBR reflectance while continuing to suppress vertical oscillation mode light
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the maximum optical power of slow light mode light, making it greater than that of the vertical oscillation mode light, improving beam quality and power density, and is suitable for high optical power applications.
Implementation Method 1
semiconductor optical amplifiers using distributed Bragg reflector waveguides
Implementation Method 2
optical amplification unit amplifying propagation light that propagates, from the light source unit, in the predetermined direction as slow light
Data Source
AI summary
A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emits the propagation light that is amplified in an emission direction that intersects with the surface. The maximum optical power of the propagation light is larger than the maximum optical power in a vertical oscillation mode.