SOEC Interconnector Coating for Low Resistance and Cr Protection

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Solution Overview

Problem

The existing interconnectors for solid oxide electrochemical cell stacks face issues with high electrical resistance due to the formation of Cr2O3 oxide films, which degrade performance, and lack sufficient adhesiveness between the protective film and metal substrate, leading to potential peeling and increased resistance.

Innovation Solution

A protective film comprising a metal layer, an oxide layer, and a mixed layer is applied to the interconnector, where the metal layer contains a first metal element, the oxide layer consists of spinel or perovskite oxides, and the mixed layer has a first and second phase, improving adhesiveness and reducing electrical resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a stainless alloy with high chromium content is used as the interconnector base, then high-temperature resistance is improved, but electrical conduction deteriorates due to Cr2O3 oxide film formation

Engineering Contradiction:
Improvehigh-temperature resistanceVSAvoidelectrical conduction
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent applies a multi-layer composite protective film structure consisting of a metal layer (containing Al, Si, or Ti), an oxide layer (containing spinel-type oxide like Co3O4 or perovskite-type oxide like LaCoO3), and a mixed layer. This composite structure prevents Cr2O3 formation on the stainless steel substrate while maintaining electrical conduction through the conductive oxide layer with mixed valence states.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent controls the oxidation state and composition of the oxide layer to maintain electrical conduction. By using oxides with mixed valence states (e.g., La1-xSrxCo1-yFeyO3) and controlling oxygen partial pressure during operation, the film maintains paramagnetic properties and electrical conductivity while protecting against Cr dispersion.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If a dense protective film is applied to prevent Cr dispersion, then Cr vaporization prevention is improved, but adhesiveness deteriorates leading to potential peeling

Engineering Contradiction:
ImproveCr dispersion preventionVSAvoidadhesiveness
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent creates different functional zones within the protective film: the metal layer provides strong adhesion to the substrate, the oxide layer provides Cr dispersion prevention and electrical conduction, and the mixed layer provides transition and bonding. Each layer has locally optimized properties for its specific function.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The multi-layer composite structure with metal layer, oxide layer, and mixed layer provides both strong adhesion and effective Cr protection. The mixed layer containing both metal and oxide phases creates a gradient structure that improves interfacial bonding while maintaining protective functions.

Inventive Principle:
Principle #40Composite materials

3Loss of energy

If a protective film is applied to maintain electrical conduction, then electrical resistance is reduced, but manufacturing complexity increases

Engineering Contradiction:
Improveelectrical resistanceVSAvoidprotective film structure
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The protective film structure is pre-formed on the interconnector before assembly into the electrochemical cell stack. The metal layer, oxide layer, and mixed layer are created in sequence during manufacturing, preparing the surface for optimal electrical and protective performance before operation.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent optimizes the thickness and composition parameters of each layer to balance electrical conduction and protective functions. The oxide layer thickness and metal element ratios are controlled to achieve the desired electrical resistance while maintaining structural integrity and adhesion.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed film structure enhances electrical conduction and adhesiveness, reducing the risk of peeling and lowering electrical resistance, thereby improving the efficiency and reliability of the solid oxide electrochemical cell stack.

Implementation Method 1

the oxide layer provided above the metal layer and including at least one oxide selected from the group consisting of a spinel-type oxide and a perovskite-type oxide... the at least one oxide containing a second metal element different from the first metal element

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

Cr dispersion prevention is a function of preventing the Cr contained in the interconnector for the solid oxide electrochemical cell stack vaporizing under high-temperature working conditions to degrade the performance of the solid oxide electrochemical cell

Methodology Applied
Scientific EffectPhysical barrier protection: Physical Containment

Implementation Method 3

a mixed layer provided between the metal layer and the oxide layer, the mixed layer having a first phase and a second phase, the first phase including the first metal element, and the second phase including the at least one oxide

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentEP4641712A1Interconnector for solid oxide electrochemical cell stack, and solid oxide electrochemical cell stack
Publication Date: 2025.10.29 TOSHIBA ENERGY SYST & SOLUTIONS CORP
  • EP4641712A1 patent drawingFigure 1~2
  • EP4641712A1 patent drawingFigure 3
  • EP4641712A1 patent drawingFigure 4

AI summary

An interconnector for a solid oxide electrochemical cell stack, includes: a metal substrate including an iron-based alloy containing chromium; and a protective film provided on the metal substrate in a first direction. The protective film includes: a metal layer provided on a surface of the metal substrate and containing a first metal element; an oxide layer provided above the metal layer and including at least one oxide selected from the group consisting of a spinel oxide and a perovskite oxide, the at least one oxide containing a second metal element different from the first metal element; and a mixed layer provided between the metal layer and the oxide layer and having a first phase and a second phase, the first phase including the first metal element, and the second phase including the at least one oxide.