Soft Coating Particle Capture for EUV Lithography Overlay Errors

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Solution Overview

Problem

Lithographic apparatuses face challenges in minimizing overlay errors due to wafer defectivity caused by small particles impacting and sticking to the wafer resist, which can lead to unacceptable circuit connections, especially as the minimum printable size decreases with each generation of EUV scanners.

Innovation Solution

A lithographic apparatus with a substrate stage and heat shields featuring a soft coating on compartment surfaces to capture particles, preventing them from reaching and sticking to the wafer resist, thereby reducing overlay errors and improving particle capture efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If imaging is performed using EUV radiation with short wavelength to reduce minimum printable size, then manufacturing precision is improved, but wafer defectivity increases due to particle impact on resist

Engineering Contradiction:
Improveminimum printable sizeVSAvoidwafer defectivity
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

A soft coating layer is introduced as an intermediary between particles and the wafer resist. This coating captures particles before they can reach the resist, thereby mitigating the harmful effect of particle impact while maintaining the benefits of short-wavelength EUV imaging for high manufacturing precision

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The soft coating is applied beforehand on compartment surfaces to create a protective barrier. This pre-positioned cushioning layer is designed to capture particles that might otherwise contaminate the wafer resist, preventing defectivity before it occurs during the lithography process

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Device complexity

If particles are allowed to float freely in the compartment, then device complexity is reduced, but manufacturing precision deteriorates due to particle adhesion to resist

Engineering Contradiction:
Improveparticle control mechanismVSAvoidoverlay accuracy
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The soft coating surfaces self-capture particles through their inherent softness and surface properties, eliminating the need for complex active particle control mechanisms. Particles that float freely in the compartment are automatically captured when they contact the coated surfaces, maintaining manufacturing precision without adding device complexity

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The soft coating effectively captures particles smaller than 500 nm, preventing them from adhering to the wafer resist and enhancing the accuracy of pattern overlay, thus improving the yield and reducing thermal management issues in EUV lithography.

Implementation Method 1

a soft coating on said compartment surface for capturing particles

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS12158706B2Lithographic apparatus and method with improved contaminant particle capture
Publication Date: 2024.12.03 ASML NETHERLANDS BV
  • US12158706B2 patent drawing
  • US12158706B2 patent drawing

AI summary

A lithographic apparatus including a substrate stage for supporting a structure in a compartment, the compartment having a compartment surface facing a top surface of the substrate in at least one operational configuration; and a soft coating on the compartment surface for capturing particles. A heat shield or component thereof for a lithographic apparatus, the heat shield or component thereof including a soft coating on at least one surface for capturing particles and a lithographic apparatus including such a heat shield.