SOI Anti-Fuse Structure Using a Trap-Rich Layer for Stable OTP
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Solution Overview
Problem
Existing semiconductor structures lack efficient integration of anti-fuse elements with other semiconductor devices on a SOI substrate, and there is a need for improved electron trapping capabilities to enhance programming characteristics.
Innovation Solution
A semiconductor structure incorporating a trap rich layer on a SOI substrate with electrically conductive structures forming an anti-fuse, where the trap rich layer captures free electrons, allowing for reduced resistance when voltage is applied, enabling one-time programming (OTP) and integration with other semiconductor processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor structure without a trap rich layer is used, then the manufacturing process is simpler, but the electron trapping capability is insufficient and programming characteristics are poor
Solution Approach 1:
A trap rich layer is formed in the substrate before forming the anti-fuse structure. This preliminary action creates electron trapping sites in advance, which improves the programming characteristics by enhancing electron capture capability during the anti-fuse formation process, while the layer is integrated into the existing substrate structure
Solution Approach 2:
The substrate is designed as a composite structure with a trap rich layer (containing electron trapping sites) combined with the base semiconductor material. This composite structure provides both the necessary electron trapping capability for improved programming and maintains compatibility with standard semiconductor fabrication processes
2Reliability
If high voltage is applied to penetrate the insulating layer to form a short circuit, then the anti-fuse programming is achieved, but the resistance reduction stability may be compromised without proper electron trapping
Solution Approach 1:
The high voltage application that could potentially cause uncontrolled damage is converted into a beneficial process by having the trap rich layer ready to capture electrons during the breakdown event. The electron trapping mechanism converts the harmful high-energy event into a controlled programming action that stabilizes the resistance reduction
Solution Approach 2:
The electrical parameters of the substrate are modified by introducing the trap rich layer with specific trap density and energy levels. This changes the electrical characteristics to enable more stable resistance reduction and better control over the programming energy requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure achieves significant resistance reduction and stable programming effects, with the trap rich layer effectively capturing electrons, enabling efficient operation of anti-fuse structures and integration with other semiconductor devices on the SOI substrate.
Implementation Method 1
the trap rich layer captures free electrons, allowing for reduced resistance when voltage is applied
Data Source
AI summary
A semiconductor structure includes a semiconductor on insulator (SOI) substrate, a first electrically conductive structure, and a second electrically conductive structure. The SOI substrate includes a base substrate, a buried insulation layer disposed on the base substrate, a semiconductor layer disposed on the buried insulation layer, and a trap rich layer disposed between the buried insulation layer and the base substrate. At least a part of the first electrically conductive structure and at least a part of the second electrically conductive structure are disposed in the trap rich layer. A part of the trap rich layer is disposed between the first electrically conductive structure and the second electrically conductive structure. The first electrically conductive structure, the second electrically conductive structure, and the trap rich layer disposed between the first electrically conductive structure and the second electrically conductive structure are at least a portion of an anti-fuse structure.