Uncooled Infrared Detector Using Standard SOI-CMOS Process
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Solution Overview
Problem
Conventional uncooled infrared detectors face challenges with high production costs and low yield due to complex, customer-specific fabrication processes, which also compromise the reliability of pixels and support structures.
Innovation Solution
The use of foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers with a generic SOI-CMOS process, involving standardized design rules and process parameters, allows for cost-efficient and high-tolerance manufacturing of uncooled infrared detectors with improved thermal isolation and sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If customer-specific fabrication processes are used to form closed well structures and support structures, then thermal isolation and pixel reliability are improved, but production cost increases and manufacturing yield decreases
Solution Approach 1:
The patent applies universality by using a standard CMOS well structure that serves multiple functions: it provides thermal isolation for pixels, supports the mechanical structure, and can be formed using conventional CMOS fabrication processes. This eliminates the need for customer-specific processes while maintaining reliability and improving yield.
Solution Approach 2:
The patent uses conventional CMOS well structures that are already proven and standardized in the industry, copying a reliable existing structure rather than developing new customer-specific processes. This approach leverages existing fabrication expertise and reduces manufacturing complexity.
2Manufacturing precision
If customer-specific fabrication processes with high precision lithography are used, then manufacturing precision of closed well and support structures is improved, but production cost increases and manufacturing time increases
Solution Approach 1:
The patent uses universal standard CMOS fabrication processes that are already optimized in the industry, eliminating the need for complex customer-specific high precision lithography steps. The standard processes achieve sufficient precision for the application while reducing overall device complexity.
Solution Approach 2:
The patent employs standard, readily available CMOS fabrication techniques rather than expensive specialized processes. This approach uses conventional, well-established manufacturing methods that are cost-effective and reduce the need for specialized equipment and expertise.
3Productivity
If standard SOI-CMOS process is used for manufacturing, then production cost decreases and manufacturing efficiency increases, but process customization for specific detector requirements is reduced
Solution Approach 1:
The patent demonstrates that the standard SOI-CMOS process can be universally applied to manufacture uncooled infrared detectors without requiring customization. The standard process inherently provides all necessary functions including thermal isolation, structural support, and pixel fabrication, making it adaptable to the application despite its generality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces production costs and increases yield while enhancing the quality and reliability of uncooled infrared detectors by standardizing the manufacturing process and improving thermal isolation and sensitivity.
Implementation Method 1
The infrared absorption layer receives and converts an infrared ray (wave) into heat
Implementation Method 2
The thermoelectric conversion element converts the heat into an electric signal that communicates the characteristics of the received infrared ray
Implementation Method 3
In order to prevent the heat from transferring among pixels, conventional uncooled infrared detectors use various types of closed well structures to thermally isolate each pixel
Data Source
Figure 1
Figure 2A~2B
Figure 3A~3B
AI summary
This disclosure discusses an infrared detector manufactured from a foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafer, the infrared detector comprising a plurality of walls forming a through well defining a first opening and a second opening opposing the first opening; an infrared sensor configured to detect an infrared wave passing through one of the first opening or the second opening of the through well; and a support arm connecting the sensor to at least one of the plurality of walls so as to suspend the infrared sensor within the through well and adjacent to the first opening.