SOI High-Voltage Diode With Trench-Modified Current Path
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Solution Overview
Problem
Conventional techniques fail to provide a practical method for forming diodes with sufficiently high breakdown voltage for isolated circuits on Silicon on Insulator (SOI) substrates, limiting their use in high-voltage applications such as electrostatic discharge protection and power circuits.
Innovation Solution
A semiconductor device with a Silicon on Insulator (SOI) substrate featuring a diode with a breakdown voltage trench adjacent to the cathode region, which modifies the current path and increases the breakdown voltage by redirecting the current flow vertically through the insulator layer, allowing for compact and reliable high-voltage diode construction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional diode structures are used on SOI substrates, then manufacturing is simple and compact, but breakdown voltage is insufficient (below 100V)
Solution Approach 1:
The diode structure is segmented by introducing a trench that divides the current path into distinct regions. The trench separates the high-voltage stress region from the low-voltage operating region, allowing the diode to achieve high breakdown voltage (at least 140V) while maintaining a compact footprint suitable for integrated circuits on SOI substrates.
Solution Approach 2:
The invention transitions from a planar current path to a three-dimensional current path by introducing a vertical trench. The current is redirected to flow vertically through the trench-modified path, utilizing the depth dimension of the SOI substrate to increase breakdown voltage without increasing the lateral area of the diode.
2Reliability
If breakdown voltage is increased to at least 140V, then high-voltage applications become enabled, but device area increases
Solution Approach 1:
The current path is redirected into the vertical dimension through the trench structure. By utilizing the thickness direction of the SOI substrate, the diode achieves high breakdown voltage (at least 140V) without requiring increased lateral area, maintaining compactness for integrated circuit applications.
Solution Approach 2:
The trench modifies the electric field distribution parameters within the diode structure. By changing the geometric parameters (introducing the trench depth and width), the breakdown voltage is increased to at least 140V while the lateral dimensions remain compact, resolving the area-voltage trade-off.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the breakdown voltage of the diode to at least 140V, enabling reliable operation in high-voltage scenarios while maintaining compactness and cost-effectiveness, surpassing the limitations of conventional SOI diodes which typically have breakdown voltages below 100V.
Implementation Method 1
at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region
Data Source
AI summary
A semiconductor device may include a Silicon on Insulator (SOI) substrate, and a diode formed on the SOI substrate, the diode including a cathode region and an anode region. The semiconductor device may include at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region.