SOI Gate Electrode With Thickened Ends
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Solution Overview
Problem
Semiconductor devices using SOI substrates face issues with parasitic capacitance and reliability due to thermal oxidation processing, which can lead to electric field concentration and increased manufacturing costs when trying to prevent these issues.
Innovation Solution
A semiconductor device with a substrate featuring an embedded insulation film and a semiconductor layer where the gate electrode extends beyond the end of the semiconductor layer, with the end portion being thicker than the center portion, reducing parasitic capacitance and maintaining high reliability while controlling manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the SOI layer is thinned to reduce parasitic capacitance, then high frequency characteristics are improved, but electric field concentration occurs causing reliability deterioration
Solution Approach 1:
The patent applies local quality by creating different film thicknesses in different regions of the semiconductor layer. The end portions have a first film thickness while the central portion has a second film thickness, optimizing each region's properties for its specific function while maintaining overall device reliability and performance.
2Reliability
If measures are taken to prevent electric field concentration, then reliability is improved, but parasitic capacitance increases and high frequency characteristics deteriorate
Solution Approach 1:
The patent resolves this contradiction by implementing local quality differentiation where the end portions maintain sufficient thickness for reliability while the central portion is thinned to reduce parasitic capacitance. This localized optimization allows both requirements to be satisfied simultaneously in their respective regions.
3Reliability
If conventional measures are taken to prevent electric field concentration, then reliability is improved, but manufacturing cost increases
Solution Approach 1:
The patent applies parameter changes by modifying the film thickness parameter across different regions of the semiconductor layer. This controlled variation in thickness achieves reliability improvement without requiring complex additional manufacturing processes, thereby avoiding significant cost increases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces parasitic capacitance, enhances reliability, and suppresses the increase in manufacturing costs by maintaining a thicker film thickness at the end of the semiconductor layer during thermal oxidation processing, preventing electric field concentration and breakdown.
Implementation Method 1
there is a case where the SOI layer is partially thinned due to thermal oxidation processing executed in a manufacturing process of a semiconductor device
Data Source
AI summary
To provide a semiconductor device capable of reducing a parasitic capacitance, securing high reliability, and suppressing an increase in manufacturing cost. A semiconductor device is provided which includes a substrate including an embedded insulation film and a semiconductor layer on the embedded insulation film and on which a semiconductor element is formed and a gate electrode on the semiconductor layer, in which the gate electrode includes a band-shaped first electrode portion that extends from a center portion of the semiconductor layer and beyond an end of the semiconductor layer along a first direction in a case where the substrate is viewed from above, and in a cross section in a case where the first electrode portion and the substrate are cut along the first direction, a film thickness of the end of the semiconductor layer is thicker than a film thickness of the center portion of the semiconductor layer.