SOI Semiconductor Structure for 3D Hall Sensor Integration
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Solution Overview
Problem
Existing semiconductor technologies face challenges in manufacturing cost-effective and reliable three-dimensional Hall sensors that can accurately measure all components of a magnetic field simultaneously, while maintaining electrical insulation and integration with CMOS transistors.
Innovation Solution
The development of a Silicon-On-Insulator (SOI) semiconductor structure with a three-dimensional Hall sensor structure, featuring a monolithic semiconductor body and integrated circuit, where a semiconductor layer is bonded to a substrate layer with an insulating layer, and terminal contacts are strategically positioned for rotational symmetry, allowing for the determination of all magnetic field components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a three-dimensional Hall sensor structure is manufactured using existing semiconductor technologies, then the sensor can measure magnetic field components, but the manufacturing cost and reliability are insufficient
Solution Approach 1:
The sensor structure is divided into separate functional regions: a sensor region containing the three-dimensional Hall sensor and a separate integrated circuit region. This segmentation allows independent optimization of each region for its specific function, improving overall manufacturing reliability while maintaining measurement precision.
Solution Approach 2:
An insulating layer is introduced as an intermediary between the sensor region and the integrated circuit region. This insulating layer provides electrical isolation, preventing interference between the sensitive Hall sensor and the digital circuitry, thereby improving manufacturing reliability without compromising measurement accuracy.
2Measurement precision
If a three-dimensional Hall sensor structure is manufactured using existing semiconductor technologies, then the sensor can measure magnetic field components, but the manufacturing cost is high
Solution Approach 1:
The Hall sensor structure and the integrated circuit are merged into a single monolithic semiconductor body using SOI technology. This integration eliminates the need for separate packaging and interconnection processes, significantly reducing manufacturing cost while maintaining the capability to measure all three components of the magnetic field.
Solution Approach 2:
The invention transitions from planar two-dimensional sensor designs to a three-dimensional structure utilizing the vertical dimension of the SOI substrate. This dimensional change enables compact integration of the Hall sensor and readout circuitry within the same semiconductor body, reducing manufacturing complexity and cost while preserving full three-axis magnetic field measurement capability.
3Reliability
If the semiconductor body extends from buried lower surface to front side with multiple terminal contacts, then electrical connection is improved, but parasitic capacitances increase
Solution Approach 1:
The harmful parasitic capacitances are effectively removed from the signal path by using the insulating layer to electrically isolate the terminal contacts from the substrate. This extraction of parasitic effects maintains reliable electrical connection for current and voltage contacts while minimizing interference with the sensitive Hall voltage measurements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the cost-effective and reliable manufacturing of highly sensitive Hall sensors capable of simultaneously measuring all magnetic field components, while maintaining electrical insulation and integration with CMOS transistors, reducing parasitic capacitances and manufacturing costs.
Implementation Method 1
An insulating layer is disposed between the substrate layer and the semiconductor layer
Implementation Method 2
a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body
Data Source
AI summary
An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.