SOI Insulating Layer Structure for Thermal and RF Optimization
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Solution Overview
Problem
SOI devices face limitations in high-temperature and high-power applications due to poor thermal conductivity of SiO2 layers, leading to spontaneous heating, and poor RF performance due to parasitic capacitance and leakage current, which restricts their use in applications like automobiles and high-frequency circuits.
Innovation Solution
The development of an insulating layer structure using silicon nitride or silicon oxynitride films instead of SiO2, combined with polysilicon or amorphous silicon layers, which enhances thermal conductivity, reduces parasitic capacitance, and improves RF performance through a bonding process that includes hydrogen plasma etching and laser splitting to form a high-quality SOI structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SiO2 layer is used as insulating layer in SOI structure, then good insulating performance is achieved, but thermal conductivity is poor leading to spontaneous heating
Solution Approach 1:
The patent employs a composite insulating layer structure combining SiO2 with other materials such as silicon nitride (Si3N4) or silicon oxynitride (SiON). This composite approach leverages the excellent insulating properties of SiO2 while incorporating materials with superior thermal conductivity to dissipate heat effectively, thereby resolving the contradiction between insulation and heat dissipation.
2Ease of manufacture
If conventional SiO2 insulating layer is used, then manufacturing simplicity is maintained, but parasitic capacitance and leakage current increase reducing RF performance
Solution Approach 1:
The patent introduces composite insulating layers combining SiO2 with low-dielectric-constant materials or carefully engineered multilayer structures. This reduces parasitic capacitance and leakage current while maintaining manufacturability through established semiconductor fabrication processes, thus improving RF performance without sacrificing ease of manufacture.
3Speed
If SiO2 insulating layer is used for high-speed operation, then switching speed increases, but thermal management becomes difficult due to poor heat dissipation
Solution Approach 1:
The patent implements composite insulating structures that maintain the electrical properties necessary for high-speed switching while incorporating thermally conductive materials to manage heat dissipation. The layered composite structure allows electrons to move quickly through the insulating barrier while heat is conducted away through the thermally conductive components.
4Reliability
If SiO2 layer thickness is increased to improve insulation, then insulating performance improves, but thermal conductivity further deteriorates and warpage increases
Solution Approach 1:
The patent uses composite insulating layers where a thinner SiO2 layer provides adequate insulation when combined with other materials, avoiding the need for thick SiO2 layers that cause warpage. The composite structure distributes thermal and mechanical stresses more evenly, reducing warpage while maintaining insulating performance.
Solution Approach 2:
The patent applies different materials or structures to different regions or layers of the insulating system. The SiO2 layer thickness and composition are optimized locally to provide sufficient insulation where needed, while other layers are designed to manage thermal and mechanical properties, preventing warpage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new insulating layer structure effectively addresses spontaneous heating and RF performance issues, offering improved thermal conductivity, reduced warpage, and enhanced product quality, making it suitable for diverse applications including MEMS, RF, and optical devices.
Implementation Method 1
the device substrate 1 and the supporting substrate 2 are bonded together through the thin film layer 3 arranged on at least one of the device substrate 1 and the supporting substrate 2 to form an integral multilayer SOI (Silicon On Insulator) structure
Implementation Method 2
performing laser splitting on this bonded sheet to form an SOI structure material
Data Source
AI summary
An insulating layer structure for a semiconductor product. The insulating layer structure includes a device substrate, a supporting substrate and a thin film layer. The device substrate and the supporting substrate are silicon wafers. The thin film layer(s) is/are arranged on the device substrate or/and the supporting substrate. The device substrate and the supporting substrate are bonded together through the thin film layer arranged on at least one of the device substrate and the supporting substrate to form an integral multilayer SOI structure. The insulating layer structure formed by the present invention solves problems of serious spontaneous heating of an existing SOI device, severe warpage of an existing SOI structure caused by high-temperature annealing, a poor radio frequency characteristic and the like, and has a predictable relatively higher economic and social value.