SOI Island Power Semiconductor Device Trench Processing
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Solution Overview
Problem
Current power semiconductor devices face challenges in efficiently integrating semiconductor-on-insulator islands, which are crucial for high voltage and current applications, due to limitations in trench processing and insulation structure formation.
Innovation Solution
A method involving a Venetia process is employed to create semiconductor-on-insulator islands by providing a semiconductor body with trenches, applying a mask to expose specific sections, removing insulators, and subjecting the exposed sections to pattern-collapse-processing, resulting in buried cavities and an oxide-based insulation structure that laterally and vertically confines the semiconductor region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a large amount of trenches are simultaneously produced in the semiconductor body, then productivity is improved, but manufacturing precision deteriorates due to difficulties in controlling insulation structure formation
Solution Approach 1:
The patent segments the trench production process into multiple sequential steps: first producing a preliminary set of trenches, then producing additional trenches with different insulation requirements. This segmentation allows different insulation structures to be formed with appropriate precision for each group, while maintaining overall high productivity through batch processing.
Solution Approach 2:
The patent performs preliminary trench production and insulation structure formation for the first group of trenches before producing the second group of trenches. This preliminary action establishes a foundation that enables subsequent trenches to be produced with controlled insulation, balancing productivity gains with manufacturing precision requirements.
2Adaptability or versatility
If periphery circuitry is integrated within the same semiconductor body as power cells, then device functionality is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by creating different insulation structures in different regions of the semiconductor body. First trenches (for power cells) receive a first type of insulation structure, while second trenches (for periphery circuitry) receive a second type of insulation structure. This allows tailored insulation properties in different locations, enabling both power cell and periphery circuitry integration without uniform complexity throughout the entire device.
Data Source
AI summary
A power semiconductor device includes a semiconductor-on-insulator island having a semiconductor region and an insulation structure, the insulation structure being formed by an oxide and separating the semiconductor region from a portion of a semiconductor body of the power semiconductor device. The insulation structure includes a sidewall that laterally confines the semiconductor region; a bottom that vertically confines the semiconductor region; and a local deepening that forms at least a part of a transition between the sidewall and the bottom, wherein the local deepening extends further along the extension direction as compared to the bottom.