SOI Layer Transfer Using Perimeter Ion Implantation Control
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Solution Overview
Problem
Junction capacitance between the well region and the bulk semiconductor region in bulk semiconductor substrates impacts device performance, while semiconductor-on-insulator (SOI) substrates with an insulating layer improve device performance by eliminating this capacitance.
Innovation Solution
A method involving multiple ion implantation processes to create an exfoliation layer in a semiconductor donor substrate, followed by bonding to a handle substrate and thermal annealing to form a semiconductor-on-insulator (SOI) structure, where the exfoliation layer is separated to create a semiconductor device layer on an insulating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If bulk semiconductor substrate with well region is used, then device structure is simple, but junction capacitance between well region and bulk semiconductor region impacts device performance
Solution Approach 1:
The patent extracts the active semiconductor layer from the bulk semiconductor substrate by creating a weakened region through ion implantation and subsequent exfoliation. This separates the active region from the bulk substrate, eliminating the junction capacitance between the well region and bulk semiconductor region while maintaining the device structure's functionality.
Solution Approach 2:
The patent introduces an insulating layer as an intermediary between the active semiconductor layer and the bulk semiconductor substrate. This insulating layer acts as a mediator that electrically isolates the active region from the substrate, eliminating junction capacitance effects while allowing the device structure to function properly.
2Reliability
If semiconductor-on-insulator substrate with insulating layer is used, then device performance is improved by eliminating junction capacitance, but manufacturing process complexity increases
Solution Approach 1:
The patent performs preliminary ion implantation to create a weakened region in the donor substrate before bonding. This preliminary action prepares the structure for easy exfoliation and transfer of the active semiconductor layer to the insulating layer, simplifying the overall manufacturing process despite the multiple steps involved.
Solution Approach 2:
The patent segments the semiconductor structure into distinct layers: the active semiconductor layer, the insulating layer, and the bulk substrate. This segmentation is achieved through controlled ion implantation that creates a weakened region at a specific depth, allowing the active layer to be separated and transferred to the insulating layer, thereby eliminating junction capacitance.
3Manufacturing precision
If ion implantation creates weakened region for layer separation, then layer transfer precision is improved, but manufacturing process steps increase
Solution Approach 1:
The patent changes the physical and chemical parameters of the semiconductor material through controlled ion implantation. By adjusting ion type, energy, and dosage, a weakened region is created at a precise depth without requiring additional masking or patterning steps. This parameter-based control achieves high layer transfer precision while minimizing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of a semiconductor-on-insulator structure with reduced junction capacitance, allowing for improved device performance and controlled crack propagation for even layer transfer.
Implementation Method 1
A first implantation process is performed to form an exfoliation layer of the semiconductor donor substrate with a first ion concentration. A second implantation process is performed on a perimeter region of the exfoliation layer to form a high concentration region of the exfoliation layer with a second ion concentration higher than the first ion concentration.
Implementation Method 2
An annealing process is performed to separate the exfoliation layer from the rest of the semiconductor donor substrate.
Data Source
AI summary
A method of a semiconductor-on-insulator structure includes the following steps. A semiconductor donor substrate is provided. A first implantation process is performed to form an exfoliation layer of the semiconductor donor substrate with a first ion concentration. A second implantation process is performed on a perimeter region of the exfoliation layer to form a high concentration region of the exfoliation layer with a second ion concentration higher than the first ion concentration. The semiconductor donor substrate is bonded to a semiconductor handle substrate, so that the exfoliation layer with the high concentration region is bonded to the semiconductor handle substrate. An annealing process is performed to separate the exfoliation layer from the rest of the semiconductor donor substrate.