SOI Light Source Pocket Structure for Precise Vertical Alignment
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Solution Overview
Problem
The integration of a light source, such as a III-V device, with a silicon waveguide in photonic chips faces challenges in edge coupling and vertical alignment, with existing methods being overly complex and lacking accuracy.
Innovation Solution
A silicon on insulator (SOI) device is designed with recesses and pedestals that define a pocket for the light source, utilizing a selective etch stop material to ensure precise vertical alignment, allowing for accurate integration of the light source through a flip-chip arrangement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional integration methods are used, then light source integration is achieved, but vertical alignment accuracy deteriorates
Solution Approach 1:
The patent applies preliminary action by pre-forming pedestals with precise heights during the silicon processing stages before light source integration. These pedestals are created using selective etching and deposition techniques, establishing accurate vertical reference structures in advance that guide subsequent light source positioning and bonding operations, thereby achieving high vertical alignment accuracy without complex real-time adjustment mechanisms
Solution Approach 2:
The patent uses pedestals as intermediary structures between the silicon substrate and the light source device. These pedestals serve as mechanical stoppers and alignment references, mediating the vertical alignment process by providing stable, precisely dimensioned surfaces that facilitate accurate bonding of the light source while simplifying the overall integration structure
2Manufacturing precision
If complex alignment methods are used, then alignment accuracy is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies self-service by designing pedestals that automatically provide alignment functionality through their inherent geometric dimensions and material properties. The pedestals are formed with precise heights using standard semiconductor manufacturing techniques, and their dimensional characteristics self-determine the vertical alignment during bonding, eliminating the need for complex external alignment mechanisms or sophisticated processing steps
Solution Approach 2:
The patent utilizes parameter changes by controlling the height and dimensional parameters of the pedestals through selective etching depths and deposition thicknesses. By precisely adjusting these parameters during manufacturing, the pedestals achieve optimal dimensions for vertical alignment, enabling accurate integration using conventional manufacturing processes without requiring complex or specialized fabrication steps
Data Source
AI summary
The invention provides, amongst other aspects, a silicon on insulator, SOI, device for receiving a light source device in a flip-chip arrangement, the device comprising, from bottom to top: a support layer; a BOX, buried oxide, layer comprising BOX material; a BOX-covering layer, comprising a selective etch stop material; a cladding oxide layer, comprising a light interface; wherein the device comprises a plurality of recesses extending between the support layer and the BOX-covering layer, said recesses defining a pocket for said receiving of the light source device and a plurality of pedestals; wherein at least one of the pedestals is provided at a side of the pocket that is opposite with respect to another one of the pedestals; wherein the pedestals each extend between the support layer and the BOX-covering layer, thereby comprising a top portion comprising, preferably consisting of, said selective etch stop layer material.