SOI MOSFET Kink Effect Control via Channel Contact Region
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Solution Overview
Problem
SOI-MOSFET devices experience unstable operation due to the Kink effect, which is challenging to control without increasing design costs, as existing solutions require significant layout changes and additional structure additions, leading to higher design costs.
Innovation Solution
The SOI semiconductor device incorporates a substrate with insulation and silicon films, featuring a gate electrode sandwiched by first and second diffusion regions of opposing conductivity types, with an insulation region dividing the gate electrode's width direction, allowing for the formation of channel contact regions that minimize the Kink effect without major layout modifications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional diffusion regions (channel contact regions) are formed to control the Kink effect, then the Kink effect is suppressed, but the layout complexity and design cost increase significantly
Solution Approach 1:
The patent merges the channel contact region with the source/drain diffusion region by forming the channel contact region within the same diffusion process step. This integration eliminates the need for separate additional diffusion regions while still achieving the function of controlling the Kink effect through proper electrical connection to the channel region.
Solution Approach 2:
The diffusion region serves multiple functions: it acts as both the source/drain region for current flow and as the channel contact region for electrical connection to the channel. This multi-functionality reduces the overall device complexity while maintaining the ability to control the Kink effect.
2Reliability
If additional diffusion regions are formed to control the Kink effect, then the Kink effect is suppressed, but the design cost increases due to major layout changes and additional masks
Solution Approach 1:
By combining the channel contact region formation with the existing source/drain diffusion process, the patent eliminates the need for additional mask steps and layout modifications. This merging approach maintains design cost efficiency while achieving Kink effect control.
Data Source
AI summary
An SOI semiconductor device has a substrate, an insulation film, a silicon film, a gate insulation film, a gate electrode, a pair of first diffusion regions, a first region, and a second diffusion region. The insulation film is formed on the substrate. The silicon film is formed on the insulation film. The gate insulation film is formed on the silicon film. The gate electrode is formed on the gate insulation film. The pair of first diffusion regions is formed in the silicon film while sandwiches the under part of the gate electrode in between. The first region is sandwiched by a pair of the first diffusion regions. The second diffusion region contacts with the first region while adjoins one of the first regions and has the same conductivity type with the first region.