SOI Structure Oxygen Diffusion for Buried Oxide Thickness Control
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Solution Overview
Problem
The manufacturing of Semiconductor-On-Insulator (SOI) structures with thin semiconductor and dielectric layers faces challenges such as deformation, bubble formation, and poor interface quality due to trapped water and contamination particles during heat treatment, which affects the thickness uniformity and dielectric properties of the buried oxide layer.
Innovation Solution
A process involving a semiconductor layer bonded between a substrate and an intermediate nitride layer, with a thin oxide layer configuration that separates bonding and insulating functions, allowing controlled oxygen diffusion to reduce the thickness of the oxide layer in an inert atmosphere, thereby maintaining the quality and uniformity of the first oxide layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor layer and dielectric layer are made thinner to enable miniaturization, then the device size and power consumption are reduced, but the quality of the semiconductor layer deteriorates due to deformation and bubble formation from trapped water during heat treatment
Solution Approach 1:
The patent divides the original single oxide layer into two separate oxide layers: a first oxide layer that serves as the final buried oxide layer, and a second oxide layer that serves as a bonding layer. This segmentation allows the bonding layer to be sufficiently thick to prevent deformation and bubble formation during bonding, while the final buried oxide layer can be made thin for miniaturization without compromising quality.
Solution Approach 2:
The patent performs the bonding operation first using a thick second oxide layer to ensure high-quality bonding without defects, and then subsequently reduces the thickness of this layer through heat treatment to achieve the desired thin final structure. This preliminary action of bonding with a thick layer avoids the problems that would occur if bonding were attempted with a thin layer from the start.
2Reliability
If a thick oxide layer is used during bonding to prevent deformation and bubble formation, then the bonding quality is improved, but the dielectric layer thickness cannot be reduced for miniaturization
Solution Approach 1:
The patent segments the oxide layer structure into a first oxide layer and a second oxide layer, where the second oxide layer serves as a temporary bonding layer that can be made thick for reliable bonding, while the first oxide layer serves as the final thin dielectric layer for miniaturization. The bonding layer is subsequently removed or reduced after serving its bonding function.
Solution Approach 2:
The patent changes the thickness parameter of the oxide layer dynamically: using a thick second oxide layer during the bonding process to ensure reliability, then reducing its thickness through heat treatment to achieve the desired thin final structure, while maintaining the first oxide layer at the target thin thickness throughout.
3Length of stationary object
If heat treatment is performed to reduce oxide layer thickness, then miniaturization is achieved, but the dielectric quality and electrical properties at the interface deteriorate
Solution Approach 1:
The patent performs the bonding operation first with a thick second oxide layer to establish high-quality interfaces, and then subsequently performs heat treatment to reduce the oxide layer thickness. This preliminary bonding action ensures that the interface quality is established before the thickness reduction, avoiding interface degradation.
Solution Approach 2:
The patent segments the oxide layer into a first oxide layer that maintains good interface quality with the semiconductor layer and a second oxide layer that is reduced in thickness through heat treatment. This segmentation protects the critical semiconductor-oxide interface while allowing thickness reduction in the bonding region.
4Volume of moving object
If the buried oxide layer is made thinner for miniaturization, then device size is reduced, but water and contamination particles trapped during bonding cause internal pressure and poor interface quality
Solution Approach 1:
The patent performs the bonding operation first with a sufficiently thick second oxide layer that can absorb and accommodate trapped water and contamination particles without causing interface degradation, and then subsequently reduces the oxide layer thickness through heat treatment. This preliminary bonding with adequate thickness prevents harmful effects before miniaturization is achieved.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of SOI structures with improved dielectric properties, homogeneous thickness, and reduced heat treatment duration, allowing for more miniaturized and efficient semiconductor components with lower power consumption.
Implementation Method 1
heat treating the said structure in an inert or reducing atmosphere with a temperature value and a temperature duration chosen for diffusing an amount of oxygen of the second oxide layer through the thin semiconductor layer
Implementation Method 2
the said intermediate layer is made of a material and has a thickness chosen for stopping the diffusion of oxygen from the first oxide layer towards the thin semiconductor layer
Implementation Method 3
heat treating the said structure in an inert or reducing atmosphere with a temperature value and a temperature duration chosen for diffusing an amount of oxygen
Data Source
Figure 1~2E
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AI summary
The invention relates to a process of treating a structure for electronics or optoelectronics, the structure comprising successively: - a substrate, - a first oxide layer, - an intermediate layer, - a second oxide layer made of an oxide of a semiconductor material, - a thin semiconductor layer made of said semiconductor material, characterized in that it comprises a heat treatment of the structure in an inert or reducing atmosphere with a temperature and a duration chosen for inciting an amount of oxygen of the second oxide layer to diffuse through the semiconductor layer so that the thickness of the second oxide layer decreases by a determined value. The invention also relates to a process of manufacturing a structure for electronics or optoelectronics comprising the said heat treatment.