SOI SCR Structure with Laterally Integrated Body Diodes
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Solution Overview
Problem
Silicon-on-insulator (SOI) technology is susceptible to electrostatic discharge (ESD) events due to its thermal conductivity and floating body effects, which poses challenges for ESD protection in advanced microelectronics, particularly in CMOS field effect technologies, where existing SCR designs from bulk technologies cannot be directly mapped.
Innovation Solution
A silicon controlled rectifier (SCR) structure is developed for SOI technology, comprising laterally integrated P+-N body diodes and N+-P body diodes, formed in lightly doped wells, which provides robust ESD protection by shunting ESD current away from protected circuitry with low capacitance loading and scalable on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SCR structure is implemented in SOI technology, then ESD protection capability is improved, but device complexity increases due to lateral integration requirements
Solution Approach 1:
The patent combines the P+-N body diode and N+-P body diode into a laterally integrated SCR structure, merging multiple protective functions into a single compact device that provides comprehensive ESD protection while maintaining manufacturability in SOI technology
Solution Approach 2:
The patent transitions from conventional vertical SCR structures to a lateral integration approach, arranging the P+-N and N+-P body diodes side-by-side in the horizontal plane, which adapts the SCR design to SOI technology constraints and enables effective ESD protection in advanced microelectronics
2Reliability
If laterally integrated P+-N and N+-P body diodes are used, then ESD current shunting is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs localized high doping regions (P+ and N+ body diodes) within lightly doped wells, creating distinct functional zones with optimized doping concentrations that enhance ESD current shunting while providing clear fabrication targets for manufacturing processes
Solution Approach 2:
The patent optimizes the doping concentration parameters by using lightly doped wells with specific doping levels that balance the manufacturing precision requirements with the need for effective ESD protection, allowing standard fabrication processes to achieve the required performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SCR structure effectively redirects ESD current to ground, preventing damage to protected devices while maintaining low capacitance loading, suitable for high-speed series link applications, and offers improved ESD performance with a lower holding voltage.
Implementation Method 1
An ESD event refers to a phenomenon of electrical discharge of a current (positive or negative) for a short duration during which a large amount of current is provided to an integrated circuit (IC)
Implementation Method 2
The SCR structure effectively redirects ESD current to ground, preventing damage to protected devices
Data Source
AI summary
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.