SOI Semiconductor Thermal Conductive Layer and Interruption Structure
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Solution Overview
Problem
Semiconductor devices with a silicon-on-insulator (SOI) structure face challenges in heat dissipation and operating speed due to the low thermal conductivity of the insulator layer, which restricts the effectiveness of substrate biasing for reducing power consumption and increasing operating speed.
Innovation Solution
A semiconductor device is designed with a thermal conductive layer linking the semiconductor layer to a heat dissipation layer, and an interruption structure that allows heat generated by the transistor to be dissipated while enabling arbitrary substrate potential settings, thereby enhancing heat dissipation and operating speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If an insulator layer is introduced between the active region and substrate to achieve high integration and low power consumption, then device integration density is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent segments the substrate connection path by introducing an interruption structure that divides the continuous electrical connection into separate regions. This allows the insulator layer to remain intact for electrical isolation while enabling thermal conduction paths to pass through the interruption structure to the substrate, thus resolving the heat dissipation issue without compromising integration density.
Solution Approach 2:
The interruption structure acts as an intermediary element that mediates between the insulator layer and substrate. It provides a pathway for heat transfer while maintaining electrical isolation, allowing thermal energy to pass through without enabling current flow, thus resolving the contradiction between electrical insulation and thermal conduction.
2Temperature
If the substrate is electrically connected to the active region to enable heat dissipation, then heat dissipation is improved, but substrate bias control for high-speed operation and power reduction is lost
Solution Approach 1:
The interruption structure segments the electrical connection between substrate and active region, creating separate thermal and electrical pathways. This segmentation allows heat to dissipate through the substrate while preventing unwanted current flow, thereby preserving substrate bias control capability for optimizing operating speed and power consumption.
Solution Approach 2:
The interruption structure serves as an intermediary that selectively permits thermal conduction while blocking electrical current. This mediator enables heat dissipation functionality without compromising the ability to control substrate bias voltage for performance optimization.
3Temperature
If a contact plug is extended through the insulator layer to connect with the substrate for heat dissipation, then heat dissipation path is secured, but electrical connection cannot be interrupted for bias control
Solution Approach 1:
The interruption structure creates a segmented configuration where the contact plug is divided into separate sections. The insulator layer remains intact in most regions to maintain electrical isolation, while localized interruptions provide thermal pathways. This segmentation enables both heat dissipation and flexible bias control by allowing selective electrical connection points.
Solution Approach 2:
The interruption structure acts as an intermediary element that decouples the thermal and electrical functions. It allows heat to flow through the contact plug region while blocking electrical current, thereby providing adaptability for bias control while maintaining effective heat dissipation pathways.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high-speed operation and reduced power consumption by effectively dissipating heat and allowing for substrate biasing, improving the performance of semiconductor devices with a SOI structure in a simple configuration.
Implementation Method 1
a thermal conductive layer linking the semiconductor layer and the heat dissipation layer
Data Source
AI summary
A semiconductor device includes: a substrate; an insulator layer provided on the substrate; a first transistor provided on the insulator layer; a semiconductor layer including a plurality of impurity regions of a first conduction type, the impurity regions forming a part of the first transistor; a heat dissipation layer; a thermal conductive layer linking the semiconductor layer and the heat dissipation layer; and an interruption structure configured to interrupt a flow of a current between the first transistor and the thermal conductive layer.