SOI Substrate Built-In Junction via Doped Dielectric Bonding
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Solution Overview
Problem
Current methods for manufacturing silicon-on-insulator integrated circuits damage the buried oxide and silicon layers, necessitating a solution to mitigate or eliminate these deficiencies.
Innovation Solution
A method involving forming an oxide layer on a silicon substrate, ion-implanting hydrogen to create a fracture zone, bonding a doped dielectric layer, and thermally cleaving to form a silicon-on-insulator substrate with a doped layer adjacent to the buried dielectric layer, allowing for the creation of built-in junctions without damaging the silicon or oxide layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If current methods are used to place devices in the substrate under the buried oxide, then device density is improved, but damage occurs to the buried oxide layer and silicon layer
Solution Approach 1:
A doped layer is formed in the substrate before bonding the silicon layer to the buried oxide. This preliminary doping action enables subsequent device formation under the buried oxide without requiring damage to the oxide or silicon layers, thus achieving high device density while preserving layer integrity
Solution Approach 2:
The substrate is segmented into multiple functional layers including the buried oxide layer, silicon layer, and separately formed doped layer in the substrate. This segmentation allows independent formation and optimization of each layer, enabling device placement under the buried oxide without compromising the integrity of the oxide or silicon layers
2Manufacturing precision
If ion-implantation is used to form doped layers through the silicon layer, then doping is achieved, but damage occurs to the silicon layer and buried oxide
Solution Approach 1:
A doped layer is formed in the substrate as an intermediary structure before bonding. This intermediary approach allows doping to occur in the substrate without requiring ion-implantation through the silicon layer and buried oxide, thereby achieving precise doping while avoiding damage to the silicon layer and buried oxide
Solution Approach 2:
Instead of implanting dopants through the silicon layer and buried oxide from the top, the doping is performed in the substrate from the bottom before bonding. This inverted approach achieves the same doping objective without the harmful effects of high-energy ion implantation through the sensitive layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of silicon-on-insulator substrates with built-in junctions, reducing damage to the buried oxide and silicon layers, and facilitating the production of high-density integrated circuits with improved performance and reliability.
Implementation Method 1
ion-implanting hydrogen through the oxide layer into the first substrate, to form a fracture zone in the substrate
Implementation Method 2
heating the bonded substrate to drive dopant from the bonding layer into the second substrate to form a doped layer in the second substrate adjacent to the bonding layer
Implementation Method 3
heating the silicon-on-insulator substrate to activate the dopant species in the ion-implanted region of the doped layer to form a doped region in the doped layer
Data Source
AI summary
A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI substrate includes forming an oxide layer on a silicon first substrate; ion-implanting hydrogen through the oxide layer into the first substrate, to form a fracture zone in the substrate; forming a doped dielectric bonding layer on a silicon second substrate; bonding a top surface of the bonding layer to a top surface of the oxide layer; thinning the first substrate by thermal cleaving of the first substrate along the fracture zone to form a silicon layer on the oxide layer to formed a bonded substrate; and heating the bonded substrate to drive dopant from the bonding layer into the second substrate to form a doped layer in the second substrate adjacent to the bonding layer.