SOI High-Frequency Switch With Split Gate Resistors for Low Insertion Loss
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Solution Overview
Problem
Existing high frequency switches do not adequately address insertion loss characteristics in multi-mode systems that combine time division duplex and frequency division duplex systems, which affects power consumption in transmission power amplifiers.
Innovation Solution
A high frequency switch is designed with a configuration that includes TDD and FDD ports, utilizing series switches with FETs and distinct gate resistors to manage high frequency signal transfer, where FDD-side switches have larger gate resistors to reduce insertion loss while maintaining satisfactory switching speed for TDD-side switches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a high frequency switch is configured with series switches for both TDD and FDD systems using identical gate resistor values, then the switching speed for TDD systems is maintained, but insertion loss characteristics for FDD systems deteriorate
Solution Approach 1:
The patent applies different gate resistor values to different switch groups based on their system requirements: FDD-side switches use larger gate resistors (e.g., 100Ω-1kΩ) to reduce insertion loss and improve power efficiency, while TDD-side switches use smaller gate resistors (e.g., 10Ω-100Ω) to maintain fast switching speed. This local differentiation resolves the contradiction by optimizing each subsystem's performance characteristics independently.
Solution Approach 2:
The high frequency switch is segmented into distinct TDD-side and FDD-side switch groups, each with independently optimized gate resistor values. This segmentation allows the patent to address the conflicting requirements of TDD (fast switching) and FDD (low insertion loss) systems separately, thereby resolving the technical contradiction between switching speed and insertion loss.
2Use of energy by moving object
If the gate resistor value is increased to reduce insertion loss in FDD systems, then power consumption in transmission power amplifiers is reduced, but switching speed deteriorates
Solution Approach 1:
The patent implements local quality optimization by assigning larger gate resistor values specifically to FDD-side switches where power efficiency is prioritized, while maintaining smaller gate resistor values in TDD-side switches where switching speed is critical. This selective application resolves the contradiction between power consumption and switching speed by matching resistor values to system-specific requirements.
3Loss of energy
If a single gate resistor value is used for all switches in a multi-mode system, then device complexity is reduced, but insertion loss characteristics in FDD modes deteriorate
Solution Approach 1:
The patent segments the gate resistor configuration into two distinct groups: FDD-side switches with larger resistors and TDD-side switches with smaller resistors. This segmentation approach balances device complexity with performance optimization, creating a manageable two-group configuration that significantly improves FDD insertion loss characteristics while maintaining reasonable design complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves insertion loss characteristics for FDD systems and reduces power consumption in transmission power amplifiers, maintaining satisfactory switching speed for TDD systems in multi-mode wireless communication systems.
Implementation Method 1
a first gate resistor connected to a gate of the first FET; and a second gate resistor connected to a gate of the second FET
Data Source
AI summary
There is provided a high frequency switch formed on an SOI substrate and having improved insertion loss characteristics in a multimode system. The high frequency switch includes: at least one first port; at least one second port; a common port; a first series switch; and a second series switch.