SOI Semiconductor Structure With Thermal Via for Low Parasitic Capacitance
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Solution Overview
Problem
Semiconductor devices with radio-frequency circuits on SOI substrates face issues of harmonic distortion due to parasitic capacitance and reduced heat dissipation efficiency, leading to increased transistor temperature.
Innovation Solution
A semiconductor device with an opening in the support substrate overlapping the semiconductor element region, filled with a heat dissipation layer having higher thermal conductivity than the insulating layer, allowing heat to be efficiently radiated from the support substrate while reducing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If an opening is formed in the support substrate to reduce parasitic capacitance, then harmonic distortion is suppressed, but heat dissipation efficiency decreases and transistor temperature increases
Solution Approach 1:
The patent changes the thermal conductivity parameter of the material filling the opening by selecting a heat dissipation layer with higher thermal conductivity than the insulating layer, thereby improving heat dissipation efficiency while maintaining the opening structure that reduces parasitic capacitance
Solution Approach 2:
The patent uses a composite structure combining the insulating layer and the heat dissipation layer with different thermal conductivity properties. The heat dissipation layer is specifically designed to conduct heat away from the transistor region through the opening, resolving the contradiction between electrical isolation and thermal management
2Object-generated harmful factors
If an opening is formed in the support substrate, then parasitic capacitance is reduced, but the efficiency of heat dissipation from transistors decreases
Solution Approach 1:
The patent modifies the thermal conductivity parameter of the filling material in the opening, selecting a heat dissipation layer with higher thermal conductivity than the insulating layer. This parameter change enables efficient heat conduction through the opening structure, preventing energy loss while maintaining the electrical isolation benefits of the opening
Solution Approach 2:
The heat dissipation layer acts as an intermediary material within the opening, facilitating heat transfer from the transistor region through the insulating layer to the support substrate. This intermediary structure resolves the contradiction by providing a dedicated thermal conduction path that does not compromise the electrical isolation function of the opening
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses harmonic distortion and maintains high heat dissipation efficiency, preventing transistor temperature rise and improving radio-frequency characteristics.
Implementation Method 1
a heat dissipation layer that contacts the insulating layer in a region encompassed by the opening in plan view and has a thermal conductivity higher than a thermal conductivity of the insulating layer
Implementation Method 2
heat generated in the semiconductor element region passes through the insulating layer and the heat dissipation layer and is radiated from the surface of the heat dissipation layer
Data Source
AI summary
A device layer contains a semiconductor element in part of a region thereof. An insulating layer is on one surface of the device layer. A support substrate including a semiconductor is on a surface of the insulating layer on an opposite side from a side where the device layer is disposed. The support substrate has an opening overlapping a semiconductor element region in which the semiconductor element is formed in plan view and extending from a bottom surface of the support substrate to the insulating layer, the bottom surface being on an opposite side from a side where the insulating layer is disposed. An insulating heat dissipation layer contacts the insulating layer in a region encompassed by the opening in plan view and has a thermal conductivity higher than that of the insulating layer.