SOI Transistor with Oxide Semiconductor Control Terminal
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Solution Overview
Problem
As microfabrication advances, semiconductor devices face increased standby power consumption due to higher leakage currents and dynamic standby power, particularly in SOI substrates, which hinders the achievement of higher operation speed and lower power consumption.
Innovation Solution
Incorporating field-effect transistors with oxide semiconductor layers on SOI substrates and utilizing a control terminal to control the threshold voltage, reducing the off-state current and power consumption by electrically connecting the control terminal to impurity regions in the substrate, thereby managing the channel formation region voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If microfabrication is advanced to obtain higher operation speed, then operation speed is improved, but leakage current increases and standby power consumption increases
Solution Approach 1:
The invention divides the semiconductor device into two distinct transistor types: conventional transistors for high-speed operation and oxide semiconductor transistors for low-power standby functions. This segmentation allows each transistor type to optimize its performance for specific operational modes, resolving the contradiction between speed and power consumption.
Solution Approach 2:
The invention applies different material qualities to different regions: oxide semiconductor layers are used specifically in transistors requiring low off-state current, while conventional semiconductors are used where high mobility is needed. This local differentiation of material properties enables simultaneous optimization of speed and power consumption in different circuit regions.
2Speed
If SOI substrate is used to obtain higher operation speed, then operation speed is improved, but threshold voltage shifts due to back gate effect and power consumption increases
Solution Approach 1:
The invention introduces a control terminal as an intermediary element that mediates the back gate effect. By applying control voltages to this terminal, the threshold voltage shifts caused by the SOI substrate's back gate effect are compensated, enabling precise control of transistor threshold voltage while maintaining low power consumption.
Solution Approach 2:
The invention dynamically adjusts the threshold voltage parameter of oxide semiconductor transistors by applying control voltages to the control terminal. This parameter adjustment compensates for the back gate effect and optimizes the balance between operation speed and power consumption based on operational requirements.
3Loss of energy
If oxide semiconductor layer is used to reduce off-state current, then power consumption is reduced, but operation speed may be reduced
Solution Approach 1:
The invention segments the transistor population into oxide semiconductor transistors for low-power applications and conventional transistors for high-speed applications. This segmentation ensures that the inherent low off-state current of oxide semiconductors is utilized where power consumption is critical, while conventional transistors handle speed-critical functions.
Solution Approach 2:
The invention adjusts the threshold voltage parameter of oxide semiconductor transistors through control terminal voltages to optimize the trade-off between off-state current and operation speed. By dynamically changing this parameter, the system can adapt oxide semiconductor transistor performance to match specific operational requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances operation speed while reducing power consumption by minimizing the current flowing between the source and drain in the off-state, thus lowering overall power usage in semiconductor devices.
Implementation Method 1
a field-effect transistor which includes an oxide semiconductor layer and has a low off-state current are provided in a semiconductor device
Implementation Method 2
a control terminal for controlling a threshold voltage of the field-effect transistor provided on the SOI substrate is provided, so that the threshold voltage of the field-effect transistor provided on the SOI substrate is controlled
Data Source
AI summary
A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.