Trench Capacitors on SOI Substrates for High Integration Density
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Solution Overview
Problem
Current semiconductor technologies face challenges in integrating memory, logic, and capacitor structures on a single semiconductor-on-insulator (SOI) substrate with high integration density, lacking process commonality between memory devices, logic devices, and on-chip capacitors.
Innovation Solution
A method is developed to integrate on-chip capacitors and memory devices on the same SOI substrate using a common trench capacitor process, where trench capacitors are formed in both memory and logic regions using the same process sequence, allowing for structural identity and increased trench pattern density, thereby achieving commonality in manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate processes are used for memory devices, logic devices, and on-chip capacitors, then each device type can be optimized independently, but process complexity and manufacturing cost increase
Solution Approach 1:
The patent implements a universal trench capacitor formation process that serves multiple functions: forming capacitors in memory regions, logic regions, and isolation regions. This multi-functional approach allows the same process sequence to optimize different device types while maintaining process commonality, thereby reducing overall process complexity despite maintaining device-specific optimization capabilities
2Reliability
If different capacitor structures are used in memory and logic regions, then specific performance requirements can be met, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent applies local quality by forming isolation regions with trench capacitors in specific locations (between memory and logic regions) while using a unified process. This allows different regions to have tailored capacitor structures where needed (in memory regions for memory performance, in logic regions for logic performance) while maintaining process commonality, thereby achieving performance optimization without proportionally increasing manufacturing cost
3Productivity
If trench pattern density is increased, then integration density improves, but process difficulty and manufacturing precision requirements increase
Solution Approach 1:
The patent employs preliminary action by forming isolation regions with trench capacitors before final device fabrication steps. This advance preparation of trench structures in all regions (memory, logic, and isolation) establishes a consistent foundation that facilitates higher integration density while managing manufacturing precision requirements through standardized early-stage processing
Data Source
AI summary
A device is provided that includes memory, logic and capacitor structures on a semiconductor-on-insulator (SOI) substrate. In one embodiment, the device includes a semiconductor-on-insulator (SOI) substrate having a memory region and a logic region. Trench capacitors are present in the memory region and the logic region, wherein each of the trench capacitors is structurally identical. A first transistor is present in the memory region in electrical communication with a first electrode of at least one trench capacitor that is present in the memory region. A second transistor is present in the logic region that is physically separated from the trench capacitors by insulating material. In some embodiments, the trench capacitors that are present in the logic region include decoupling capacitors and inactive capacitors. A method for forming the aforementioned device is also provided.