SOI Wafer Separation via Low-Energy Hydrogen Gettering
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for manufacturing silicon-on-insulator (SOI) substrates using hydrogen ion implantation result in high doses of hydrogen, leading to defective thin silicon layers due to hydrogen distribution and interaction with defects, compromising the quality of the semiconductor material.
Innovation Solution
A process involving ion implantation and annealing to create a buried defect layer, followed by bonding and introducing low-energy atomic hydrogen from the backside to facilitate separation at a temperature below 600°C, utilizing the defect layer to getter hydrogen and prevent damage to the usable silicon layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high dose hydrogen ion implantation is used to create microbubble layer for wafer separation, then detachment is achieved, but defects are generated in the thin silicon layer compromising quality
Solution Approach 1:
The patent divides the hydrogen implantation process into two distinct stages: first implanting hydrogen ions to create a microbubble layer for detachment, then performing a second implantation at lower dose to passivate defects. This segmentation allows each implantation to serve a specific function, resolving the contradiction between achieving detachment and maintaining layer quality.
Solution Approach 2:
The patent performs preliminary defect passivation by implanting hydrogen ions at a controlled depth and dose before the final detachment step. This preliminary action prepares the structure by reducing defects in the thin silicon layer, ensuring high quality is maintained throughout the subsequent detachment process.
2Manufacturing precision
If hydrogen dose is reduced by factor of 5-10 to minimize defects, then thin layer quality improves, but detachment efficiency decreases
Solution Approach 1:
The patent segments the hydrogen implantation into two phases: an initial phase with sufficient dose to create the microbubble layer for efficient detachment, followed by a second phase with optimized lower dose to passivate defects. This segmentation enables both high detachment efficiency and thin layer quality to be achieved.
Solution Approach 2:
The patent changes key parameters including hydrogen ion dose, energy, and implantation timing. By optimizing these parameters across two separate implantation steps, the process achieves both efficient detachment and high thin layer quality, resolving the contradiction between productivity and manufacturing precision.
3Productivity
If plasma with high-energy particles is used to introduce hydrogen, then hydrogen introduction is efficient, but surface defects are produced
Solution Approach 1:
The patent performs preliminary low-dose hydrogen implantation to passivate surface defects before the main hydrogen introduction step. This preliminary action ensures that when high-energy hydrogen is introduced for efficient detachment, the surface quality is already protected and defects are minimized.
Solution Approach 2:
The patent uses an intermediary approach by introducing hydrogen through controlled ion implantation rather than direct plasma exposure. This intermediary method allows efficient hydrogen introduction while avoiding the high-energy particle damage that would otherwise create surface defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-quality thin silicon layers with reduced defects, ensuring better integration capabilities for electronic components while maintaining process reliability and economic viability.
Implementation Method 1
implanting hydrogen ions on the front side of a silicon wafer
Implementation Method 2
the extension whereof is determined by the longitudinal distribution of the process of ion-silicon interaction
Implementation Method 3
introducing atomic hydrogen into said first wafer through said second face at an energy such as to avoid defects to be generated in said first wafer... utilizing the defect layer to getter hydrogen
Implementation Method 4
introducing atomic hydrogen into said first wafer through said second face at an energy such as to avoid defects to be generated in said first wafer and at a temperature lower than 600° C.
Implementation Method 5
forming a defect layer in said first wafer at a distance from said first face; bonding said first face of said first wafer to a second wafer
Data Source
AI summary
To manufacture a layer of semiconductor material, a first wafer of semiconductor material is subjected to implantation to form a defect layer at a distance from a first face; the first wafer is bonded to a second wafer, by putting an insulating layer present on the second wafer in contact with the first face of the first wafer. Then, hydrogen atoms are introduced into the first wafer through a second face at an energy such as to avoid defects to be generated in the first wafer and at a temperature lower than 600° C. Thereby, the first wafer splits into a usable layer, bonded to the second wafer, and a remaining layer disposed between the defect layer and the second face of the first wafer. Prior to bonding, the first wafer is subjected to processing steps for obtaining integrated components.