SOI Wafer TSV Thermal Isolation
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Solution Overview
Problem
As semiconductor devices are miniaturized and packed closer together, thermal cycles and heat generated by one device can adversely affect the performance of nearby devices, leading to reduced performance and increased wafer and chip space utilization challenges.
Innovation Solution
The use of silicon on insulator (SOI) wafers with embedded devices connected by through silicon vias (TSVs) allows for the placement of high voltage metal oxide transistors and other semiconductor devices in underutilized areas, isolating heat-generating devices and improving circuit density and heat dissipation through TSVs and conventional heat sinks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are packed closer together to increase circuit density, then wafer utilization and circuit density improve, but thermal interference between devices increases and performance deteriorates
Solution Approach 1:
The invention divides the wafer into multiple independent layers separated by insulating oxide layers. Heat-generating devices are segregated into specific layers, preventing thermal interference between devices on the same layer while maintaining high overall circuit density. The segmentation of the wafer structure allows thermal isolation zones between device layers.
Solution Approach 2:
The invention transitions from two-dimensional planar device arrangement to three-dimensional stacked architecture. By stacking multiple device layers vertically separated by oxide layers, the system achieves higher circuit density without increasing in-plane device proximity, thereby reducing thermal interference while maximizing wafer utilization.
2Speed
If thermal cycles are increased to enhance device performance, then device speed improves, but nearby devices are adversely affected by heat
Solution Approach 1:
The multi-layer structure with insulating oxide layers segments heat-generating regions from heat-sensitive regions. High-power devices requiring thermal cycles for performance enhancement can be placed in specific layers isolated from other devices, allowing aggressive thermal processing without adversely affecting nearby devices on the same layer.
Solution Approach 2:
The insulating oxide layers act as thermal intermediaries between device layers. These oxide layers provide thermal isolation, allowing heat-generating devices in one layer to undergo thermal cycles for performance enhancement without transmitting excessive heat to devices in adjacent layers, thus protecting them from thermal damage.
3Ease of manufacture
If conventional wafer structures are used, then manufacturing processes are simple, but available wafer space is underutilized
Solution Approach 1:
The invention extends wafer utilization into the vertical dimension by stacking multiple device layers. This three-dimensional approach dramatically increases the effective wafer space utilization without complicating the fundamental manufacturing processes, as each layer can be fabricated using standard semiconductor processing techniques.
Solution Approach 2:
The insulating oxide layers serve multiple functions: they provide electrical isolation between layers, thermal isolation to manage heat, and structural support for the stacked architecture. This multi-functionality enables the complex three-dimensional structure to be manufactured using relatively simple extensions of conventional processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances circuit density and performance by isolating heat-sensitive devices, improving heat dissipation, and utilizing unused wafer space, thereby addressing the thermal challenges and space utilization issues in semiconductor manufacturing.
Implementation Method 1
The wafers, at least one of which is covered by an insulating or oxide layer, may be bonded by adhesive
Implementation Method 2
or fusion bonded if both surfaces are covered with an oxide layer
Implementation Method 3
improving heat dissipation through TSVs and conventional heat sinks
Implementation Method 4
A method includes implanting one or more semiconductor device elements on a top surface of a first wafer
Data Source
AI summary
In an approach to fabricating a silicon on insulator wafer, one or more semiconductor device elements are implanted and one or more shallow trench isolations are formed on a top surface of a first semiconductor wafer. A first dielectric material layer is deposited over the top surface of the first semiconductor wafer, filling the shallow trench isolations. A dielectric material layer on a bottom surface of a second semiconductor wafer is bonded to a dielectric material layer on the top of the first semiconductor wafer and one or more semiconductor devices are formed on a top surface of the second semiconductor wafer. Then, one or more through silicon vias are created connecting the one or more semiconductor devices on the top surface of the second semiconductor wafer and the one or more semiconductor device elements on the top surface of the first semiconductor wafer.