Solar Cell Contact Structure with Enhanced Conductive Portion
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Solution Overview
Problem
The photoelectric conversion efficiency of solar cells is hindered by inefficient electrical connections between electrodes and doped conductive layers, leading to poor carrier transport and increased carrier recombination due to the poor conductivity of intrinsic polycrystalline silicon layers and potential penetration of electrodes through tunnel oxide layers.
Innovation Solution
Incorporating an enhanced conductive portion with a conductive film and pillar, made from materials like metal or semiconductor materials, to establish a reliable electrical connection between the doped conductive layer and electrodes, while maintaining good interface passivation and reducing optical loss by using an intrinsic polycrystalline silicon layer to prevent electrode penetration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a doped conductive layer is used to improve electrical connection, then carrier transport is improved, but photoelectric conversion efficiency deteriorates
Solution Approach 1:
The conductive system is divided into separate functional layers: the intrinsic polycrystalline silicon layer maintains photoelectric conversion efficiency by preventing direct electrode-substrate contact, while the enhanced conductive portion provides the necessary electrical connection and carrier transport pathways.
Solution Approach 2:
The enhanced conductive portion acts as an intermediary between the intrinsic polycrystalline silicon layer and the electrode, providing efficient carrier transport and electrical connection without requiring the entire conductive layer to be highly doped, thus preserving photoelectric conversion efficiency.
2Productivity
If conductivity of conductive layer is increased, then carrier transport efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
High conductivity is localized to the enhanced conductive portion where it is most needed for carrier transport and electrical connection, while the intrinsic polycrystalline silicon layer maintains its passivation function. This localized approach achieves high carrier transport efficiency without requiring the entire structure to be highly complex.
Solution Approach 2:
The conductive layer uses a composite structure combining intrinsic polycrystalline silicon and enhanced conductive materials, leveraging the advantages of both materials to achieve high carrier transport efficiency while managing manufacturing complexity through established material combinations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances carrier transport efficiency, reduces serial resistance, and improves both front and back cell efficiency, as well as double-sided power generation rates by ensuring effective electrical connection and maintaining passivation effects.
Implementation Method 1
an enhanced conductive portion covering one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer, wherein at least part of the enhanced conductive portion is connected to the doped conductive layer
Implementation Method 2
Solar cells can directly convert solar radiation energy into electrical energy
Implementation Method 3
a tunnel oxide layer covering the first surface
Data Source
AI summary
A solar cell and a photovoltaic module. The solar cell includes substrate, tunnel oxide layer, doped conductive layer, intrinsic polycrystalline silicon layer, enhanced conductive portion, and first electrodes. The tunnel oxide layer covers the first surface of the substrate. The doped conductive layer covers one side of the tunnel oxide layer away from the substrate. The intrinsic polycrystalline silicon layer is formed on one side of the doped conductive layer away from the tunnel oxide layer. The enhanced conductive portion covers one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer, and is at least partially connected to the doped conductive layer. First electrodes are formed on one side of the enhanced conductive portion away from the intrinsic polycrystalline silicon layer, and at least part of each first electrode is located in the enhanced conductive portion to be electrically connected to the doped conductive layer.