Solar Cell Diode-Like Semiconductor Contact for Reverse Voltage Protection
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Solution Overview
Problem
Photovoltaic solar cell modules face efficiency losses and potential damage due to partial shading, which causes reverse voltage and uncontrolled breakdown in shaded cells, leading to reduced power generation and increased production costs when trying to incorporate bypass diodes within the cells.
Innovation Solution
Incorporating diode-like semiconductor contacts between the emitter and base regions in the solar cells, allowing for controlled current flow during reverse voltage conditions without the need for external bypass diodes, thus preventing excessive voltage buildup and hot spots.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bypass diodes are arranged as independent electronic components within the solar cell, then the reverse voltage is limited and breakdown is prevented, but the production complexity and costs increase due to additional diffusion steps
Solution Approach 1:
The bypass diode functionality is merged with the existing emitter contacting structure by forming a diode-like semiconductor contact in the overlapping region where the emitter contact overlaps with the base region. This eliminates the need for separate bypass diode components and additional diffusion steps, while maintaining the voltage limitation function.
Solution Approach 2:
The emitter contacting structure is designed to serve dual functions: as the standard emitter contact for current collection and as a bypass diode for protecting against reverse voltage damage. The diode-like semiconductor contact formed in the overlapping region enables this multi-functionality without requiring additional components.
2Reliability
If bypass diodes are arranged as independent electronic components within the solar cell, then the reverse voltage is limited and breakdown is prevented, but the manufacturing costs increase due to additional process steps
Solution Approach 1:
The bypass diode functionality is merged with the existing emitter contacting structure by forming a diode-like semiconductor contact in the overlapping region where the emitter contact overlaps with the base region. This eliminates the need for separate bypass diode components and additional diffusion steps, while maintaining the voltage limitation function.
3Reliability
If the emitter contacting structure overlaps the base region to form diode-like contacts, then controlled current flow is achieved during reverse voltage, but the structural complexity increases
Solution Approach 1:
The bypass diode functionality is merged with the existing emitter contacting structure by forming a diode-like semiconductor contact in the overlapping region where the emitter contact overlaps with the base region. This eliminates the need for separate bypass diode components and additional diffusion steps, while maintaining the voltage limitation function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances module efficiency under partial shading conditions by allowing controlled current flow during reverse voltage, preventing damage and reducing production complexity and costs, while maintaining normal operation efficiency.
Implementation Method 1
In this overlapping region, a diode-like semiconductor contact is formed between the emitter contacting structure and the base region
Implementation Method 2
a photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy
Implementation Method 3
The charge carrier separation takes place at a pn junction
Data Source
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AI summary
The invention relates to a photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy, comprising at least one base region of a base-doping type, designed in a silicon substrate; at least one emitter region of an emitter-doping type that is of an opposite doping type to the base-doping type; at least one metallic base-contacting structure connected, in an electrically conductive manner, to the base region, and at least one metallic emitter-contacting structure connected, in an electrically conductive manner, to the emitter region, the base region and emitter region being arranged in such a manner that a pn-junction is formed at least in some regions between said base and emitter regions. It is essential that the base-contacting structure overlaps the emitter region in a base-bypass region and that in said overlap region, a diode-like semiconductor contact is designed between the base-contacting structure and the emitter region, said semiconductor contact being designed as a metal semiconductor contact or as a metal-insulator-semiconductor contact, and/or that the emitter-contacting structure overlaps the base region in an emitter-bypass region and that in this overlap region, a diode-like semiconductor contact is designed between the emitter-contacting structure and the base region, said semiconductor contact being designed as a metal semiconductor contact or as a metal-insulator-semiconductor contact. The invention also relates to a method for producing a solar cell.