Solar Cell Ferroelectric Segmentation for Recombination Control
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Solution Overview
Problem
Conventional silicon solar cells face efficiency degradation due to the ferroelectric layer's impact on solar light incidence and electrical contact area when formed on either the upper or lower side, respectively.
Innovation Solution
A solar cell structure featuring a substrate with a lower electrode, a ferroelectric layer outside the lower electrode, an auxiliary electrode to polarize the ferroelectric layer, and semiconductor layers with a transparent conductive upper electrode, allowing for extended depletion layer area and improved electron-hole recombination without obstructing solar light incidence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the ferroelectric layer is formed in the entire upper side of the solar cell, then the electron-hole recombination rate is reduced, but the amount of solar light incident upon the solar cell is reduced
Solution Approach 1:
The ferroelectric layer is segmented and formed only in specific regions (around the lower electrode and/or upper electrode) rather than covering the entire surface. This segmentation allows light to incident on the majority of the cell surface while still providing the beneficial polarization effect at the electrode interfaces where it is most needed for reducing recombination.
Solution Approach 2:
The ferroelectric layer is applied locally at critical interfaces (electrode-semiconductor junctions) rather than uniformly across the entire cell. This local quality approach places the material precisely where it can most effectively reduce electron-hole recombination, while leaving the bulk surface open for light absorption.
2Reliability
If the ferroelectric layer is formed in the entire lower side of the solar cell, then the electron-hole recombination rate is reduced, but the electrical contact area between the semiconductor layer and the lower electrode is insufficient
Solution Approach 1:
The ferroelectric layer is segmented and positioned only at the periphery or specific regions around the lower electrode rather than forming a continuous layer across the entire lower surface. This allows the central region to maintain direct electrical contact between the semiconductor and electrode, while the peripheral ferroelectric regions provide recombination suppression.
Solution Approach 2:
The ferroelectric layer is applied locally at the interface regions where electrode contact occurs, rather than uniformly across the entire lower surface. This local application reduces recombination at the critical junction areas while preserving adequate electrical contact area in the bulk region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances photoelectric conversion efficiency by maximizing solar light incidence and electrical contact area, reducing electron-hole recombination rates and improving overall solar cell performance.
Implementation Method 1
the area of the depletion layer of the solar cell is extended using the polarization phenomenon of the ferroelectric layer
Implementation Method 2
a solar cell for converting light incident from an outside into electricity
Data Source
AI summary
A silicon solar cell with high photoelectric conversion efficiency is disclosed. A solar cell for converting light incident from an outside into electricity according to the present invention includes a substrate, a lower electrode, a ferroelectric layer, an auxiliary electrode, a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an upper electrode. The lower electrode is formed on the substrate. The ferroelectric layer is formed on the substrate and outside the lower electrode. The auxiliary electrode is formed on the ferroelectric layer. The first conductivity-type semiconductor layer is formed on the lower electrode and the auxiliary electrode. The second conductivity-type semiconductor layer is formed on the first conductivity-type semiconductor layer, and is composed of a semiconductor of a second conductivity type opposite to a first conductivity type. The upper electrode is made of transparent conductive material, and is formed on the second conductivity-type semiconductor layer.