Monolithic Solar Cell Integration on SOI Substrate

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Solution Overview

Problem

The voltage output of standalone silicon-based solar cells is insufficient to drive high-performance transistors, limiting their ability to power advanced CMOS devices, and existing solutions for increasing voltage require additional power or prime silicon real estate.

Innovation Solution

Monolithic integration of solar cells on a silicon-on-insulator substrate with controlled spalling technology to create a thin handle layer, allowing for serial connection of solar cells to increase voltage output while maintaining mechanical support and avoiding prime silicon usage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If standalone silicon-based solar cells are used, then the structure is simple, but the voltage output is insufficient to drive high-performance transistors

Engineering Contradiction:
Improvestructure simplicityVSAvoidvoltage output
Core Design Contradiction:
Device complexityVSPower

Solution Approach 1:

The solar cell substrate is divided into multiple segments (first solar cell, second solar cell, third solar cell) connected in series. Each segment generates voltage, and the series connection multiplies the total voltage output, solving the insufficient voltage problem while maintaining reasonable structural complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple solar cell structures are merged into a single integrated device on the silicon-on-insulator substrate. The series connection of multiple solar cells combines their voltage outputs to achieve sufficient power for driving high-performance transistors

Inventive Principle:
Principle #5Merging (Combining)

2Power

If large area CMOS diodes are used as photovoltaic components, then the power output is sufficient, but the use of advanced CMOS technology is inhibited

Engineering Contradiction:
Improvepower outputVSAvoidCMOS technology compatibility
Core Design Contradiction:
PowerVSAdaptability or versatility

Solution Approach 1:

The photovoltaic function is moved from the prime silicon substrate (where CMOS devices should be located) to the handle substrate dimension. This allows advanced CMOS technology to be used on the semiconductor layer while the solar cell structures are formed in the handle substrate, achieving both sufficient power output and CMOS compatibility

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Power

If multiple solar cells are connected in series to increase voltage, then the power output is sufficient, but additional power requirements or prime silicon usage is needed

Engineering Contradiction:
Improvevoltage outputVSAvoidsilicon usage
Core Design Contradiction:
PowerVSQuantity of substance

Solution Approach 1:

The handle substrate, which traditionally serves only as mechanical support, is given a dual function by forming solar cell structures within it. This allows the handle substrate to generate power while the prime silicon substrate is reserved exclusively for CMOS devices, eliminating the need for additional silicon usage

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables efficient monolithic integration of solar cells with integrated circuits, providing sufficient power for low-power CMOS technology and facilitating the isolation and serial connection of solar cells to enhance voltage output, suitable for energy-autonomous devices.

Implementation Method 1

solar cell structures connected in series

Methodology Applied
Scientific EffectPhotovoltaic effect: Photovoltaic Effect

Implementation Method 2

cleaving through the handle substrate by exerting a force on the flexible handle layer

Methodology Applied
Scientific EffectMechanical force: Mechanical Force

Data Source

PatentUS8906779B2Solar-powered energy-autonomous silicon-on-insulator device
Publication Date: 2014.12.09 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US8906779B2 patent drawing
  • US8906779B2 patent drawing
  • US8906779B2 patent drawing

AI summary

A solar-powered autonomous CMOS circuit structure is fabricated with monolithically integrated photovoltaic solar cells. The structure includes a device layer including an integrated circuit and a solar cell layer. Solar cell structures in the solar cell layer can be series connected during metallization of the device layer or subsequently. The device layer and the solar cell layer are formed using a silicon-on-insulator substrate. Subsequent spalling of the silicon-on-insulator substrate through the handle substrate thereof facilitates production of a relatively thin solar cell layer that can be subjected to a selective etching process to isolate the solar cell structures.