Solar Cell Substrate Overlap Deposition for Higher Throughput

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Solution Overview

Problem

Existing methods for depositing silicon on semiconductor substrates in solar cell production are time-consuming, limiting the production capacity of solar cells.

Innovation Solution

A method involving the simultaneous deposition of a semiconductor layer on overlapping semiconductor substrates using low-pressure chemical vapor deposition (LPCVD), followed by texturing and thermal processing to form conductive regions, which allows for increased productivity by doubling the production rate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If silicon is deposited on each semiconductor substrate separately in traditional methods, then the deposition process can be completed with standard equipment, but the production time is long and productivity is low

Engineering Contradiction:
Improveproduction amount of solar cellVSAvoidtime required in deposition operation
Core Design Contradiction:
ProductivityVSLoss of time

Solution Approach 1:

The patent merges multiple semiconductor substrates by overlapping them face-to-face to form a stacked structure, enabling simultaneous deposition of silicon layers on all substrates in a single processing cycle. This combining approach transforms individual substrate processing into batch processing, directly resolving the contradiction between productivity and time loss.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from processing substrates in a single plane to processing them in a stacked three-dimensional configuration. By overlapping substrates vertically and accessing their back surfaces, the method enables parallel deposition on multiple substrates simultaneously, effectively utilizing the vertical dimension to increase throughput without extending process time.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If the entire surface of semiconductor substrate is deposited with silicon, then complete coverage is achieved, but the process time increases significantly

Engineering Contradiction:
Improvecoverage of semiconductor layerVSAvoiddeposition process time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent applies silicon deposition selectively to specific regions rather than uniformly across entire surfaces. By targeting only the back surfaces of overlapping substrates and specific patterned areas, the method achieves sufficient functional coverage while minimizing deposition time and material usage.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent employs partial deposition action by forming semiconductor layers only on the back surfaces of substrates and in specific regions where needed for device functionality. This partial approach eliminates the need for time-consuming complete surface coverage while maintaining manufacturing precision for the critical functional areas.

Inventive Principle:
Principle #16Partial or excessive action

3Productivity

If multiple semiconductor substrates are processed simultaneously, then productivity increases, but the process complexity and equipment requirements increase

Engineering Contradiction:
Improveproduction rate of solar cellVSAvoidprocess complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent segments the processing into distinct stages: substrate preparation and overlapping, simultaneous deposition on back surfaces, separation of substrates, and individual front surface processing. This segmentation allows complex multi-substrate processing to be broken down into manageable steps that can be performed with standard equipment, reducing overall process complexity while maintaining high productivity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary actions by pre-overlapping and aligning multiple substrates in a stacked configuration before deposition. This preliminary arrangement ensures proper positioning and enables subsequent batch processing without requiring complex in-situ alignment mechanisms, thereby increasing productivity while keeping equipment complexity manageable.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method significantly enhances the production efficiency of solar cells by allowing the simultaneous deposition and texturing of semiconductor layers on both sides of overlapping substrates, thereby doubling the productivity compared to traditional methods.

Implementation Method 1

The semiconductor layer depositing operation may be performed using a low pressure chemical vapor deposition (LPCVD) equipment

Methodology Applied
Scientific EffectLow pressure chemical vapor deposition (LPCVD): Chemical Vapour Deposition

Implementation Method 2

a first thermal processing operation performed after the semiconductor layer depositing operation, the first thermal processing operation including thermally processing a portion of the semiconductor layer formed on the back surface of the semiconductor substrate to form a first conductive region having impurities

Methodology Applied
Scientific EffectThermal diffusion: Diffusion

Data Source

PatentEP3331032B1Method of manufacturng solar cell
Publication Date: 2025.10.22 JINGAO SOLAR CO LTD
  • EP3331032B1 patent drawingFigure 1
  • EP3331032B1 patent drawingFigure 2
  • EP3331032B1 patent drawingFigure 3

AI summary

A method of manufacturing a solar cell is disclosed. The method includes an overlap operation of overlapping front surfaces of two semiconductor substrates each other, a semiconductor layer depositing operation of simultaneously depositing a semiconductor layer on back surfaces of the two semiconductor substrates overlapping each other, a separating operation of separating the two semiconductor substrates overlapping each other, and a front surface texturing operation of texturing the front surfaces of the two semiconductor substrates after an etch stop layer forming operation.