Back-Contact Solar Cell Architecture With Differentiated P- and N-Regions

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Solution Overview

Problem

Current solar cell manufacturing processes and structures do not efficiently enhance the efficiency and cost-effectiveness of solar cells, as they lack innovative methods for fabricating solar cell emitter regions with differentiated P-type and N-type region architectures.

Innovation Solution

The method involves forming a solar cell with a substrate having a light-receiving surface and a back surface, including a first doped region of a first conductivity type, a first thin dielectric layer, a first semiconductor layer, and a second doped region of a second conductivity type, with conductive contacts over each doped region, using processes such as chemical vapor deposition, lithographic masking, and thermal processing to optimize the structure and efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional solar cell manufacturing processes are used, then manufacturing simplicity is maintained, but solar cell efficiency and power generation capability are insufficient

Engineering Contradiction:
Improvesolar cell efficiencyVSAvoidfabrication process complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The solar cell structure is segmented into distinct regions with different doping types (P-type and N-type regions) and conductivity characteristics. This segmentation allows each region to be optimized for specific functions, improving overall energy conversion efficiency while maintaining a structured fabrication approach

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the solar cell substrate are doped with different dopant types and concentrations to create localized areas with specific electrical properties. This local quality differentiation enables optimized charge carrier separation and collection, enhancing solar cell efficiency without requiring complete restructuring of the entire device

Inventive Principle:
Principle #3Local quality

2Power

If differentiated P-type and N-type region architectures are implemented, then power generation capability is improved, but manufacturing cost increases

Engineering Contradiction:
Improvepower generation capabilityVSAvoidmanufacturing cost
Core Design Contradiction:
PowerVSEase of manufacture

Solution Approach 1:

Dopant regions are formed prior to forming the semiconductor layer, allowing for pre-positioned doping patterns that simplify subsequent fabrication steps. This preliminary action reduces the number of complex processing steps required and lowers manufacturing costs while maintaining the differentiated architecture

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Multiple fabrication steps are merged into integrated processes, such as combining dopant deposition with semiconductor layer formation. This merging reduces the total number of manufacturing steps, decreases production time, and lowers overall manufacturing costs while achieving the desired differentiated structure

Inventive Principle:
Principle #5Merging (Combining)

3Manufacturing precision

If advanced fabrication processes are used to optimize emitter regions, then solar cell efficiency increases, but manufacturing time and complexity increase

Engineering Contradiction:
Improveemitter region optimizationVSAvoidmanufacturing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The fabrication process is segmented into distinct stages (forming dopant regions, forming semiconductor layer, forming conductive contacts) that can be independently optimized and controlled. This segmentation allows for precise emitter region fabrication while maintaining overall process efficiency through modular manufacturing

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Dopant regions are formed in advance before the semiconductor layer is deposited, allowing for pre-planned and pre-positioned doping patterns. This preliminary action enables precise emitter region optimization without requiring complex post-processing steps, thereby maintaining manufacturing efficiency

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach increases the efficiency and cost-effectiveness of solar cells by optimizing the fabrication of solar cell emitter regions, leading to improved power generation capabilities and reduced manufacturing costs.

Implementation Method 1

using processes such as chemical vapor deposition

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

using processes such as chemical vapor deposition, lithographic masking, and thermal processing

Methodology Applied
Scientific EffectThermal processing: Heating

Data Source

PatentUS12009441B2Solar cells with differentiated p-type and n-type region architectures
Publication Date: 2024.06.11 MAXEON SOLAR PTE LTD
  • US12009441B2 patent drawing
  • US12009441B2 patent drawing
  • US12009441B2 patent drawing

AI summary

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.