Solar Cell Preparation Method Texturing Intrinsic Amorphous Silicon Layers

Solution Overview

Problem

The conventional process of growing a microcrystalline thin film on a silicon substrate with a textured surface leads to incomplete contact between the intrinsic amorphous silicon thin film and the substrate, causing defects and a decrease in open-circuit voltage (Uoc), which limits solar cell efficiency.

Innovation Solution

A method involving preparing intrinsic amorphous silicon layers on both sides of a non-textured silicon substrate, followed by forming n-type and p-type microcrystalline doped layers, and then texturing these layers to improve contact and enhance light trapping.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If texturing is performed on the silicon substrate first, then the intrinsic amorphous silicon thin film can be prepared, but the pyramid textured surface generated by wet chemical reaction shows a much larger size than the thickness of the intrinsic amorphous silicon thin film, making it difficult for the intrinsic amorphous silicon thin film to contact the silicon substrate completely

Engineering Contradiction:

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent inverts the conventional sequence by preparing the intrinsic amorphous silicon thin film on a flat substrate first, then performing texturing on the film surface. This reversal ensures complete contact between the film and substrate while achieving the desired light-trapping texture on the outer surface.

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The patent performs the film deposition action before the texturing action. By preparing the intrinsic amorphous silicon thin film completely covering the substrate first, the preliminary action ensures full contact is established before any surface modification occurs.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If the intrinsic amorphous silicon thin film does not contact the silicon substrate completely, then defects are formed on the surface, but this leads to direct contact between the doped microcrystalline silicon thin film and the silicon substrate, causing a decrease in open-circuit voltage

Engineering Contradiction:

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

By inverting the process sequence and texturing after film deposition, the patent ensures the film completely contacts the substrate during deposition, eliminating defects and preventing direct doped film-substrate contact that would reduce open-circuit voltage.

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The intrinsic amorphous silicon thin film serves as an intermediary layer between the substrate and the doped microcrystalline silicon thin film. Complete contact of this intermediary layer with the substrate ensures proper electrical isolation and carrier selectivity, maintaining high open-circuit voltage.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Productivity

If texturing is performed on the n-type and p-type microcrystalline doped layers, then light trapping effect is improved, but the process complexity increases

Engineering Contradiction:

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent performs texturing as a preliminary action on the doped layers after they are deposited. This timing ensures the doped layers are fully formed with proper composition before surface texturing, achieving light trapping without compromising the underlying film quality.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method improves the contact between the intrinsic amorphous silicon thin film and the substrate, reduces direct contact between the doped microcrystalline silicon thin film and the substrate, thereby enhancing the conversion efficiency of the solar cell.

Implementation Method 1

preparing intrinsic amorphous silicon layers on both surfaces of the untextured silicon substrate

Methodology Applied

Scientific EffectPlasma-enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Implementation Method 2

performing texturing on surfaces of the n-type microcrystalline doped layer and the p-type microcrystalline doped layer using an alkaline solution

Methodology Applied

Scientific EffectWet chemical etching: Crevice Corrosion

Data Source

PatentEP4661083A1Solar cell preparation method and solar cell

Publication Date: 2025.12.10

Figure 1~2

AI summary

The present application relates to a solar cell preparation method and a solar cell. The solar cell preparation method comprises: providing a silicon substrate (100) having non-textured surfaces; preparing intrinsic amorphous silicon layers on the two non-textured surfaces of the silicon substrate (100); respectively preparing an n-type microcrystalline doped layer and a p-type microcrystalline doped layer on the surfaces of the two intrinsic amorphous silicon layers; and texturing the surfaces of the n-type microcrystalline doped layer and the p-type microcrystalline doped layer.