Double-Sided Local Interconnect Structure for Solder-Free PoP Packaging
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and reliable electrical connections between semiconductor dies, particularly in Package-on-Package (PoP) technology, due to issues like warpage mismatch, electromigration, and the need for interposers, which affect communication bandwidth and reliability.
Innovation Solution
A semiconductor package design featuring a double-sided local interconnect component embedded in a redistribution structure, eliminating solder connections and using a solder-free connection between the interconnect component and the redistribution structure, which is individually fabricated and tested, reducing the need for an interposer and enhancing communication bandwidth and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If solder connections are used to attach semiconductor dies, then electrical connections can be established, but reliability deteriorates due to electromigration and crack formation
Solution Approach 1:
The patent removes solder connections from the semiconductor package structure entirely. Instead of using solder to attach dies to the substrate, the invention employs a solder-free attachment method where dies are directly mounted to the substrate using die attach films or other non-solder materials, thereby eliminating the harmful effects of electromigration and crack formation associated with solder joints
Solution Approach 2:
The patent introduces an intermediary layer (die attach film or adhesive material) between the semiconductor die and the substrate to establish mechanical and electrical connections without using solder. This intermediary material serves as a mediator that provides reliable attachment while avoiding the reliability issues inherent in solder connections
2Reliability
If an interposer is used to connect semiconductor dies, then communication bandwidth can be improved, but device complexity increases
Solution Approach 1:
The patent eliminates the interposer component from the package structure. Instead of using a separate interposer substrate to facilitate high-bandwidth communication between dies, the invention achieves direct die-to-substrate connectivity through the substrate's own interconnect structure, thereby maintaining communication bandwidth while significantly reducing package complexity
Solution Approach 2:
The patent makes the substrate serve multiple functions: it acts as both the mechanical support platform and the interconnection medium. The substrate's trace structure provides both structural support and electrical connectivity, eliminating the need for a dedicated interposer component and simplifying the overall package architecture
3Ease of manufacture
If warpage mismatch is present in PoP technology, then packaging can be achieved, but reliability deteriorates
Solution Approach 1:
The patent modifies the physical and material parameters of the package components to reduce warpage mismatch. This includes selecting materials with matched coefficients of thermal expansion (CTE) for the substrate and die attach films, optimizing the thickness and material composition of interlayer structures, and controlling the thermal and mechanical properties of the die attach materials to minimize differential expansion and contraction during temperature cycling
Data Source
AI summary
A method of forming a semiconductor device includes attaching a first local interconnect component to a first substrate with a first adhesive, forming a first redistribution structure over a first side of the first local interconnect component, and removing the first local interconnect component and the first redistribution structure from the first substrate and attaching the first redistribution structure to a second substrate. The method further includes removing the first adhesive from the first local interconnect component and forming an interconnect structure over a second side of the first local interconnect component and the first encapsulant, the second side being opposite the first side. A first conductive feature of the interconnect structure is physically and electrically coupled to a second conductive feature of the first local interconnect co