Solder Limiting Layer for IC Copper Bump Stress

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Solution Overview

Problem

The microelectronics industry faces challenges with cracking and delamination of low-k interlayer dielectric (ILD) layers during the flip-chip packaging process due to shear stresses from thermal expansion mismatches and normal stresses caused by die and package warping, especially as integrated circuit dimensions scale down.

Innovation Solution

A solder limiting layer is introduced over the passivation layer and portions of the metal bumps, making the outer edges non-wettable to solder, thereby restricting the solder ball's wetting area and distributing stress more evenly across the ILD layers, reducing compressive and tensile stresses.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If solder balls are allowed to wet the entire surface of metal bumps, then good electrical connection is achieved, but stress concentration occurs at the edges causing ILD cracking and delamination

Engineering Contradiction:
Improveelectrical connection qualityVSAvoidstress concentration in ILD layers
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by creating a non-uniform wetting surface on the metal bump. The center region allows solder wetting for electrical connection, while the outer edge region has modified properties (through plasma treatment, coating, or topography) to prevent solder wetting. This spatial differentiation of wetting properties eliminates edge stress concentration while maintaining central connection quality.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The metal bump surface is segmented into distinct functional zones: a central wetting region for solder attachment and an outer non-wetting region for stress relief. This segmentation is achieved through selective surface treatment methods such as plasma processing, material coating, or topographical modification that creates chemically or physically distinct zones on the bump surface.

Inventive Principle:
Principle #1Segmentation

2Object-affected harmful factors

If wider metal bumps are used to reduce stress, then stress distribution improves, but bump pitch must be increased reducing circuit density

Engineering Contradiction:
Improvestress distribution in ILD layersVSAvoidcircuit density
Core Design Contradiction:
Object-affected harmful factorsVSProductivity

Solution Approach 1:

The invention enables narrow metal bumps to achieve the stress-distribution benefits of wider bumps by creating a localized non-wetting region at the outer edge. This allows the bump to maintain a small overall diameter for high circuit density while the non-wetting edge prevents stress concentration, effectively decoupling bump size from stress management capability.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If low-k dielectric materials are used for ILD layers, then manufacturing complexity and cost are reduced, but cracking and delamination resistance decreases

Engineering Contradiction:
ImproveILD layer fabrication simplicityVSAvoidresistance to cracking and delamination
Core Design Contradiction:
Ease of manufactureVSStrength

Solution Approach 1:

The patent applies preliminary anti-action by pre-modifying the metal bump surface properties before solder attachment to prevent the harmful wetting-induced stress concentration. Through plasma treatment, coating application, or topographical modification during fabrication, the outer edge is prepared to repel solder, thereby preemptively eliminating the stress concentration mechanism that would cause low-k ILD cracking and delamination.

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution mitigates cracking and delamination issues in ILD layers by reducing stress propagation into the IC die, allowing for the use of weaker low-k materials and smaller bump pitches without inducing short circuits.

Implementation Method 1

making the outer edges non-wettable to solder, thereby restricting the solder ball's wetting area

Methodology Applied
Scientific EffectWetting: Wetting

Data Source

PatentUS7982311B2Solder limiting layer for integrated circuit die copper bumps
Publication Date: 2011.07.19 INTEL CORP
  • US7982311B2 patent drawing
  • US7982311B2 patent drawing
  • US7982311B2 patent drawing

AI summary

An apparatus comprises a semiconductor substrate having a device layer, a plurality of metallization layers, a passivation layer, and a metal bump formed on the passivation layer that is electrically coupled to at least one of the metallization layers. The apparatus further includes a solder limiting layer formed on the passivation layer that masks an outer edge of the top surface of the metal bump, thereby making the outer edge of the top surface non-wettable to a solder material.