Injection-Molded Solder Pillars for Uniform Qubit Chip Gaps
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Solution Overview
Problem
In quantum computing, achieving a uniform gap between qubit chips and interposer chips is challenging due to the limitations of low temperature reflow soldering, which can result in non-uniform gaps and degradation of quantum performance over time due to solder creep and high pressing forces required for larger qubit chips.
Innovation Solution
The use of injection-molded solder pillars with higher melting points and yield strengths than traditional solder interconnects, acting as backstops to maintain a uniform gap and prevent further deformation during cold welding or low temperature reflow soldering, while being resistant to creep and compressive stresses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low temperature reflow soldering is used to couple qubit chips to interposer chips, then the quantum components can be joined without excessive thermal damage, but the solder creep and non-uniform gaps degrade quantum performance over time
Solution Approach 1:
The patent changes the material parameters of the solder pillars by using high melting point materials (such as tungsten, molybdenum, or rhenium) with elevated modulus values. This parameter change allows the pillars to maintain structural integrity and resist creep at the low reflow temperatures used for quantum chip bonding, thereby maintaining gap uniformity over time while still enabling the joining process to proceed without thermal damage to quantum components.
Solution Approach 2:
The patent employs composite material structures where high melting point, high modulus pillars are integrated alongside traditional solder interconnects. This composite approach combines the advantages of both material types: the traditional solder provides good electrical connectivity and is compatible with low-temperature processing, while the high melting point pillars provide mechanical support and gap maintenance, together resolving the contradiction between joining capability and long-term stability.
2Area of stationary object
If high pressing forces are applied during cold welding or low temperature reflow soldering, then larger qubit chips can be coupled to interposer chips, but the required pressing forces exceed what traditional solder can withstand
Solution Approach 1:
The patent fundamentally changes the mechanical strength parameter of the interconnect structure by incorporating high modulus, high strength materials for the pillars. These materials can withstand the high pressing forces required for bonding larger qubit chips without deforming or failing. The elevated modulus values (significantly higher than traditional solder) enable the structure to support the increased loads associated with larger chip areas while maintaining dimensional stability.
3Ease of manufacture
If traditional solder interconnects are used, then the coupling process is simple, but the solder deforms under compressive stress and loses the ability to maintain uniform gaps
Solution Approach 1:
The patent segments the interconnect function into two distinct components: traditional solder interconnects for electrical coupling and high modulus pillars for mechanical support and gap maintenance. This segmentation allows each component to be optimized for its specific function while working together in an integrated structure. The pillars are positioned to provide mechanical support without interfering with the electrical connectivity function of the solder, thus maintaining manufacturing simplicity while achieving superior gap uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures a spatially uniform and stable gap between qubit chips and interposer chips, enhancing quantum performance by preventing gap non-uniformity and maintaining coherence over time, even under compressive loads or thermalization schemes.
Implementation Method 1
a yield strength of the one or more injection-molded solder pillars can be between 3,000 pounds per square inch and 15,000 pounds per square inch, which can be higher than a yield strength of the one or more injection-molded solder interconnects
Implementation Method 2
a melting point of the one or more injection-molded solder pillars can be higher than a melting point of the one or more injection-molded solder interconnects
Implementation Method 3
resistant to creep and compressive stresses
Implementation Method 4
the one or more injection-molded solder pillars can be superconductors
Data Source
AI summary
Systems and techniques that facilitate uniform qubit chip gaps via injection-molded solder pillars are provided. In various embodiments, a device can comprise one or more injection-molded solder interconnects. In various aspects, the one or more injection-molded solder interconnects can couple at least one qubit chip to an interposer chip. In various embodiments, the device can further comprise one or more injection-molded solder pillars. In various instances, the one or more injection-molded solder pillars can be between the at least one quit chip and the interposer chip. In various cases, the one or more injection-molded solder pillars can be in parallel with the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can facilitate and/or maintain a uniform gap between the at least one qubit chip and the interposer chip. In various embodiments, a melting point of the one or more injection-molded solder pillars can be higher than a melting point of the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can be superconductors. In various embodiments, a yield strength of the one or more injection-molded solder pillars can be between 3,000 pounds per square inch and 15,000 pounds per square inch, which can be higher than a yield strength of the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can be binary tin alloys, tertiary tin alloys, and/or quaternary tin alloys.