High Resolution Solder Resist Material for Silicon Bridge

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Solution Overview

Problem

Conventional semiconductor manufacturing techniques face challenges in creating vias smaller than 45 nanometers due to light scattering issues with conventional solder resist materials, requiring additional costly processes like UV laser exposure, which increases complexity and cost.

Innovation Solution

A high-resolution solder resist material with spherical filler particles of 30-60 nanometers in diameter is used, reducing light scattering and allowing both larger and smaller vias to be opened via lithographic processes without UV laser, using a darkened material to minimize reflection from copper surfaces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional solder resist material is used, then manufacturing process is simple, but light scattering occurs reducing via patterning precision below 45 nanometers

Engineering Contradiction:

Improvevia patterning precisionVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent changes the particle size parameter of the filler material from conventional larger sizes to specifically 30-60 nanometer spherical particles. This parameter change reduces light scattering while maintaining material effectiveness, enabling precise via patterning down to sub-45 nanometer sizes without requiring additional UV laser processes.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses a composite solder resist material comprising polymer base material combined with spherical filler particles of 30-60 nanometers diameter. This composite structure provides both the mechanical properties of solder resist and the optical properties needed for high-resolution lithographic patterning, eliminating light scattering issues while maintaining process simplicity.

Inventive Principle:

Principle #40Composite materials

2Manufacturing precision

If UV laser exposure process is added to create small vias, then via size precision is improved, but manufacturing cost and process complexity increase

Engineering Contradiction:

Improvevia size controlVSAvoidmanufacturing cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent changes the optical parameters of the solder resist material by using spherical particles with diameter of 30-60 nanometers, which are optimized for lithographic wavelength exposure. This allows the material to be properly patterned using standard lithographic processes without requiring additional UV laser exposure steps, reducing both cost and complexity while maintaining sub-45 nanometer via precision.

Inventive Principle:

Principle #35Parameter changes

3Object-affected harmful factors

If light wavelength is increased to reduce scattering, then light scattering is reduced, but via patterning resolution decreases

Engineering Contradiction:

Improvelight scatteringVSAvoidvia patterning resolution

Core Design Contradiction:

Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The patent changes the particle size parameter to 30-60 nanometers, which is specifically optimized for the wavelength of light used in lithographic processes. This particle size range minimizes scattering at the operating wavelength while maintaining the ability to resolve fine features, achieving both reduced scattering and high patterning resolution simultaneously.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables precise patterning of vias down to sub-45 nanometer sizes with higher accuracy and reduced process complexity, eliminating the need for UV laser exposure and associated costs, while maintaining thermal expansion properties.

Implementation Method 1

a polymer material which hardens when exposed to light radiation

Methodology Applied

Scientific EffectPhotopolymerisation: Photopolymerisation

Implementation Method 2

reducing light scattering

Methodology Applied

Scientific EffectLight scattering reduction: Scattering

Implementation Method 3

using a darkened material to minimize reflection from copper surfaces

Methodology Applied

Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS10020262B2High resolution solder resist material for silicon bridge application

Publication Date: 2018.07.10 INTEL CORP

AI summary

In accordance with disclosed embodiments, there are provided high resolution solder resist material for silicon bridge application. For instance, in accordance with one embodiment, there is a silicon bridge disclosed, the silicon bridge having therein a solder resist layer formed from a high resolution solder resist material; in which the solder resist layer includes a polymer material which hardens when exposed to light radiation; in which the solder resist layer further includes spherical particles; a plurality of vias patterned into the solder resist layer by a photolithography process, the plurality of vias forming a set of larger vias and a set of smaller vias patterned into the solder resist layer by the photolithography process, each of the larger vias being greater in size than each of the smaller vias, and further in which each of the smaller vias are less than half the size of any one of the larger vias; in which the larger vias and the smaller vias provide through-silicon vias (TSVs) interconnects through the solder resist layer electrically interfacing two or more functional semiconductor devices affixed to the silicon bridge; and the silicon bridge further having therein a copper layer positioned below the solder resist layer. Other related embodiments are disclosed.