Solid Electrolyte Layer Structure for High-Voltage Proton Storage
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Solution Overview
Problem
Existing electricity storage devices face challenges in increasing storage capacity and reliability while maintaining performance without degradation, especially when charged at higher voltages.
Innovation Solution
The proposed electricity storage device incorporates a solid electrolyte layer with a double-layered structure of SiNy/SiOx, including an insulating layer with plasma-silicon nitride (P-SiN y ) to enhance proton movement and increase breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If charging voltage is increased to improve electricity storage capacity, then energy density increases, but device degradation occurs and reliability decreases
Solution Approach 1:
The insulating layer is divided into a double-layered structure consisting of a first insulating layer (SiOx) and a second insulating layer (SiNy). This segmentation allows each layer to perform specific functions: the SiOx layer provides proton conduction capability while the SiNy layer provides high breakdown voltage resistance, enabling the device to achieve both high electricity storage capacity and high reliability when charged at elevated voltages.
Solution Approach 2:
The patent employs a composite insulating layer structure combining silicon oxide (SiOx) and silicon nitride (SiNy) materials. This composite structure integrates the proton conduction properties of SiOx with the high dielectric strength of SiNy, resolving the contradiction between achieving high electricity storage capacity through increased charging voltage and maintaining device reliability by preventing degradation.
2Quantity of substance
If charging voltage is increased to enhance energy density, then electricity accumulation capacity improves, but breakdown voltage resistance decreases
Solution Approach 1:
The insulating layer is segmented into two distinct layers with different material compositions and functions. The first layer (SiOx) is optimized for proton conduction to enable high electricity accumulation, while the second layer (SiNy) is optimized for withstanding high breakdown voltages. This functional segmentation allows the device to simultaneously achieve high electricity accumulation capacity and high breakdown voltage resistance.
Solution Approach 2:
Different regions of the insulating layer are assigned different material properties: the first insulating layer (SiOx) possesses high proton conduction capability, while the second insulating layer (SiNy) possesses high dielectric strength. This local differentiation of material quality enables the device to achieve both high electricity accumulation capacity and high breakdown voltage resistance in different regions of the same insulating structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves energy density and electricity accumulation capacity, allowing the device to maintain performance and prevent degradation even when charged at higher voltages, thereby enhancing overall reliability.
Implementation Method 1
a solid electrolyte layer with a double-layered structure of SiNy/SiOx, including an insulating layer with plasma-silicon nitride (P-SiN y ) to enhance proton movement
Implementation Method 2
including an insulating layer with plasma-silicon nitride (P-SiN y ) to enhance proton movement and increase breakdown voltage
Data Source
Figure 1(a)~1(b)
Figure 2(a)~2(b)
Figure 3(a)~3(b)
AI summary
The electricity storage device (30) includes: a first conductivity-type first oxide semiconductor (14); a solid electrolyte layer (18K) disposed on the first oxide semiconductor layer (14), the solid electrolyte layer including a solid electrolyte enabling proton movement; an insulator layer (18N) disposed between the solid electrolyte layer (18K) and the first oxide semiconductor layer (14), the insulator layer including an insulating material; and a second conductivity-type second oxide semiconductor layer (24) disposed on the solid electrolyte layer (18K). Provided is the electricity storage device having the increased electricity storage capacity and improved reliability that can be charged without degradation even when the charging voltage is increased.